Direct evidence of compositional pulling effect in AlxGa 1-xN epilayers

H. Y. Lin, Y. F. Chen, T. Y. Lin, C. F. Shih, K. S. Liu, N. C. Chen

Research output: Contribution to journalArticle

27 Citations (Scopus)

Abstract

We report the investigation on the compositional-pulling effect of crystalline AlxGa1-xN/(0 0 0 1) sapphire epilayers by cross-sectional cathodoluminescence (CL) and energy-dispersive X-ray (EDX) analyses. Direct evidence for the compositional distribution was found in the AlxGa1-xN (0<x<0.3) layers, which accompany the different optical phenomena arising from the change of the band gap. The band gap variation of the 1.7 μm AlxGa 1-xN epilayers with the Al content rising from x=11% to 30% was observed. It is consistent with the result of depth-resolved CL spectra acquired with increasing electron energies, which can also be used to reveal the spatial composition distribution along the growth direction. We emphasize here that the selective-wavelength CL image is a very powerful tool in exploring the correlation between the specific emission and the composition of inhomogeneous alloys.

Original languageEnglish
Pages (from-to)225-228
Number of pages4
JournalJournal of Crystal Growth
Volume290
Issue number1
DOIs
Publication statusPublished - 2006 Apr 15

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

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