Direct evidence of compositional pulling effect in AlxGa 1-xN epilayers

H. Y. Lin; Y. F. Chen; T. Y. Lin; C. F. Shih; K. S. Liu; N. C. Chen

doi:10.1016/j.jcrysgro.2006.01.021

Direct evidence of compositional pulling effect in Al_xGa _1-xN epilayers

H. Y. Lin
, Y. F. Chen
, T. Y. Lin
, C. F. Shih
, K. S. Liu
, N. C. Chen

Department of Electrical Engineering

Research output: Contribution to journal › Article › peer-review

36 Citations (Scopus)

Abstract

We report the investigation on the compositional-pulling effect of crystalline Al_xGa_1-xN/(0 0 0 1) sapphire epilayers by cross-sectional cathodoluminescence (CL) and energy-dispersive X-ray (EDX) analyses. Direct evidence for the compositional distribution was found in the Al_xGa_1-xN (0<x<0.3) layers, which accompany the different optical phenomena arising from the change of the band gap. The band gap variation of the 1.7 μm Al_xGa _1-xN epilayers with the Al content rising from x=11% to 30% was observed. It is consistent with the result of depth-resolved CL spectra acquired with increasing electron energies, which can also be used to reveal the spatial composition distribution along the growth direction. We emphasize here that the selective-wavelength CL image is a very powerful tool in exploring the correlation between the specific emission and the composition of inhomogeneous alloys.

Original language	English
Pages (from-to)	225-228
Number of pages	4
Journal	Journal of Crystal Growth
Volume	290
Issue number	1
DOIs	https://doi.org/10.1016/j.jcrysgro.2006.01.021
Publication status	Published - 2006 Apr 15

All Science Journal Classification (ASJC) codes

Condensed Matter Physics
Inorganic Chemistry
Materials Chemistry

Access to Document

10.1016/j.jcrysgro.2006.01.021

Cite this

@article{166ee20232a84d1191564fecda56173f,

title = "Direct evidence of compositional pulling effect in AlxGa 1-xN epilayers",

abstract = "We report the investigation on the compositional-pulling effect of crystalline AlxGa1-xN/(0 0 0 1) sapphire epilayers by cross-sectional cathodoluminescence (CL) and energy-dispersive X-ray (EDX) analyses. Direct evidence for the compositional distribution was found in the AlxGa1-xN (0xGa 1-xN epilayers with the Al content rising from x=11\% to 30\% was observed. It is consistent with the result of depth-resolved CL spectra acquired with increasing electron energies, which can also be used to reveal the spatial composition distribution along the growth direction. We emphasize here that the selective-wavelength CL image is a very powerful tool in exploring the correlation between the specific emission and the composition of inhomogeneous alloys.",

author = "Lin, \{H. Y.\} and Chen, \{Y. F.\} and Lin, \{T. Y.\} and Shih, \{C. F.\} and Liu, \{K. S.\} and Chen, \{N. C.\}",

note = "Funding Information: The work was supported by the National Science Council and Ministry of Education of the Republic of China.",

year = "2006",

month = apr,

day = "15",

doi = "10.1016/j.jcrysgro.2006.01.021",

language = "English",

volume = "290",

pages = "225--228",

journal = "Journal of Crystal Growth",

issn = "0022-0248",

publisher = "Elsevier BV",

number = "1",

}

TY - JOUR

T1 - Direct evidence of compositional pulling effect in AlxGa 1-xN epilayers

AU - Lin, H. Y.

AU - Chen, Y. F.

AU - Lin, T. Y.

AU - Shih, C. F.

AU - Liu, K. S.

AU - Chen, N. C.

N1 - Funding Information: The work was supported by the National Science Council and Ministry of Education of the Republic of China.

PY - 2006/4/15

Y1 - 2006/4/15

N2 - We report the investigation on the compositional-pulling effect of crystalline AlxGa1-xN/(0 0 0 1) sapphire epilayers by cross-sectional cathodoluminescence (CL) and energy-dispersive X-ray (EDX) analyses. Direct evidence for the compositional distribution was found in the AlxGa1-xN (0xGa 1-xN epilayers with the Al content rising from x=11% to 30% was observed. It is consistent with the result of depth-resolved CL spectra acquired with increasing electron energies, which can also be used to reveal the spatial composition distribution along the growth direction. We emphasize here that the selective-wavelength CL image is a very powerful tool in exploring the correlation between the specific emission and the composition of inhomogeneous alloys.

AB - We report the investigation on the compositional-pulling effect of crystalline AlxGa1-xN/(0 0 0 1) sapphire epilayers by cross-sectional cathodoluminescence (CL) and energy-dispersive X-ray (EDX) analyses. Direct evidence for the compositional distribution was found in the AlxGa1-xN (0xGa 1-xN epilayers with the Al content rising from x=11% to 30% was observed. It is consistent with the result of depth-resolved CL spectra acquired with increasing electron energies, which can also be used to reveal the spatial composition distribution along the growth direction. We emphasize here that the selective-wavelength CL image is a very powerful tool in exploring the correlation between the specific emission and the composition of inhomogeneous alloys.

UR - https://www.scopus.com/pages/publications/33645025801

UR - https://www.scopus.com/pages/publications/33645025801#tab=citedBy

U2 - 10.1016/j.jcrysgro.2006.01.021

DO - 10.1016/j.jcrysgro.2006.01.021

M3 - Article

AN - SCOPUS:33645025801

SN - 0022-0248

VL - 290

SP - 225

EP - 228

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

IS - 1

ER -

Direct evidence of compositional pulling effect in Al_xGa _1-xN epilayers

Abstract

All Science Journal Classification (ASJC) codes

Access to Document

Other files and links

Fingerprint

Cite this