Direct fabrication of oxide films by a microwave-hydrothermal method at low temperature

Jin Ho Lee; Naoki Kumagai; Tomoaki Watanabe; Masahiro Yoshimura

doi:10.1016/S0167-2738(02)00602-1

Direct fabrication of oxide films by a microwave-hydrothermal method at low temperature

Jin Ho Lee, Naoki Kumagai, Tomoaki Watanabe, Masahiro Yoshimura

Department of Materials Science and Engineering

Research output: Contribution to journal › Conference article › peer-review

14 Citations (Scopus)

Abstract

A new fabrication technique of oxide film (BaTiO₃ film) has been investigated by the microwave-hydrothermal (M-H) method. The BaTiO₃ films were directly fabricated on Ti substrates at low temperature (100 °C) and short holding time (below 1 h). The obtained phases were characterized by X-ray diffraction (XRD) and scanning electron microscopy (SEM). The XRD patterns showed that a single phase of BaTiO₃ film was formed on Ti plate. The formation process of BaTiO₃ film was explained based on the photographs of SEM.

Original language	English
Pages (from-to)	41-45
Number of pages	5
Journal	Solid State Ionics
Volume	151
Issue number	1-4
DOIs	https://doi.org/10.1016/S0167-2738(02)00602-1
Publication status	Published - 2002 Nov
Event	SSP- 2000 - Tokyo, Japan Duration: 2000 Dec 11 → 2000 Dec 13

All Science Journal Classification (ASJC) codes

General Chemistry
General Materials Science
Condensed Matter Physics

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10.1016/S0167-2738(02)00602-1

Cite this

@article{a5d2ca210800483ea48338b2e21e019b,

title = "Direct fabrication of oxide films by a microwave-hydrothermal method at low temperature",

abstract = "A new fabrication technique of oxide film (BaTiO3 film) has been investigated by the microwave-hydrothermal (M-H) method. The BaTiO3 films were directly fabricated on Ti substrates at low temperature (100 °C) and short holding time (below 1 h). The obtained phases were characterized by X-ray diffraction (XRD) and scanning electron microscopy (SEM). The XRD patterns showed that a single phase of BaTiO3 film was formed on Ti plate. The formation process of BaTiO3 film was explained based on the photographs of SEM.",

author = "Lee, {Jin Ho} and Naoki Kumagai and Tomoaki Watanabe and Masahiro Yoshimura",

note = "Funding Information: The authors are thankful to Drs. Y. Ogo, T. Moriyoshi, S. Kato in RIST for their support for our cooperation. A financial support form the Japan Society for the Promotion of Science (JSPS), “Research for future program No. 96R06901”, is also acknowledged. Copyright: Copyright 2005 Elsevier B.V., All rights reserved.; SSP- 2000 ; Conference date: 11-12-2000 Through 13-12-2000",

year = "2002",

month = nov,

doi = "10.1016/S0167-2738(02)00602-1",

language = "English",

volume = "151",

pages = "41--45",

journal = "Solid State Ionics",

issn = "0167-2738",

publisher = "Elsevier",

number = "1-4",

}

TY - JOUR

T1 - Direct fabrication of oxide films by a microwave-hydrothermal method at low temperature

AU - Lee, Jin Ho

AU - Kumagai, Naoki

AU - Watanabe, Tomoaki

AU - Yoshimura, Masahiro

N1 - Funding Information: The authors are thankful to Drs. Y. Ogo, T. Moriyoshi, S. Kato in RIST for their support for our cooperation. A financial support form the Japan Society for the Promotion of Science (JSPS), “Research for future program No. 96R06901”, is also acknowledged. Copyright: Copyright 2005 Elsevier B.V., All rights reserved.

PY - 2002/11

Y1 - 2002/11

N2 - A new fabrication technique of oxide film (BaTiO3 film) has been investigated by the microwave-hydrothermal (M-H) method. The BaTiO3 films were directly fabricated on Ti substrates at low temperature (100 °C) and short holding time (below 1 h). The obtained phases were characterized by X-ray diffraction (XRD) and scanning electron microscopy (SEM). The XRD patterns showed that a single phase of BaTiO3 film was formed on Ti plate. The formation process of BaTiO3 film was explained based on the photographs of SEM.

AB - A new fabrication technique of oxide film (BaTiO3 film) has been investigated by the microwave-hydrothermal (M-H) method. The BaTiO3 films were directly fabricated on Ti substrates at low temperature (100 °C) and short holding time (below 1 h). The obtained phases were characterized by X-ray diffraction (XRD) and scanning electron microscopy (SEM). The XRD patterns showed that a single phase of BaTiO3 film was formed on Ti plate. The formation process of BaTiO3 film was explained based on the photographs of SEM.

UR - http://www.scopus.com/inward/record.url?scp=0036858970&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0036858970&partnerID=8YFLogxK

U2 - 10.1016/S0167-2738(02)00602-1

DO - 10.1016/S0167-2738(02)00602-1

M3 - Conference article

AN - SCOPUS:0036858970

SN - 0167-2738

VL - 151

SP - 41

EP - 45

JO - Solid State Ionics

JF - Solid State Ionics

IS - 1-4

T2 - SSP- 2000

Y2 - 11 December 2000 through 13 December 2000

ER -

Direct fabrication of oxide films by a microwave-hydrothermal method at low temperature

Abstract

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