Direct Growth of High-Quality InP Layers on GaAs Substrates at Low Temperature by Metalorganic Vapor Phase Epitaxy

Chin I. Liao, Kao Feng Yarn, Chien Lien Lin, Yu Lu Lin, Yeong Her Wang

Research output: Contribution to journalArticlepeer-review

13 Citations (Scopus)

Abstract

Direct growth of metamorphic structure of high quality InP layers on GaAs substrates by metalorganic vapor phase epitaxy is presented. The quality of the top InP layer is strongly affected by the growth temperatures, group III and V partial pressure ratios and peripheral environment parameters control. A growth window that has successfully suppressed the numerous dislocations and rough surface as a result of the large lattice mismatch between InP and GaAs is obtained. Only 400 nm thick InP buffer layer compared with that of previous reports of 2 μm thick is qualified to obtain low dislocations and defects, high crystal quality, and uniform and specular surface morphologies. The material quality measured by photoluminescence is even better than that of InP substrates. In addition, the 2.8 nm surface roughness is lower than that of previous reports of 11.1 nm.

Original languageEnglish
Pages (from-to)4913-4918
Number of pages6
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume42
Issue number8
DOIs
Publication statusPublished - 2003 Aug

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

Fingerprint Dive into the research topics of 'Direct Growth of High-Quality InP Layers on GaAs Substrates at Low Temperature by Metalorganic Vapor Phase Epitaxy'. Together they form a unique fingerprint.

Cite this