Direct growth of single-crystalline III-V semiconductors on amorphous substrates

Kevin Chen; Rehan Kapadia; Audrey Harker; Sujay Desai; Jeong Seuk Kang; Steven Chuang; Mahmut Tosun; Carolin M. Sutter-Fella; Michael Tsang; Yuping Zeng; Daisuke Kiriya; Jubin Hazra; Surabhi Rao Madhvapathy; Mark Hettick; Yu Ze Chen; James Mastandrea; Matin Amani; Stefano Cabrini; Yu Lun Chueh; Joel W. Ager; Daryl C. Chrzan; Ali Javey

doi:10.1038/ncomms10502

Direct growth of single-crystalline III-V semiconductors on amorphous substrates

Kevin Chen, Rehan Kapadia, Audrey Harker, Sujay Desai, Jeong Seuk Kang, Steven Chuang, Mahmut Tosun, Carolin M. Sutter-Fella, Michael Tsang, Yuping Zeng, Daisuke Kiriya, Jubin Hazra, Surabhi Rao Madhvapathy, Mark Hettick, Yu Ze Chen, James Mastandrea, Matin Amani, Stefano Cabrini, Yu Lun Chueh, Joel W. AgerDaryl C. Chrzan, Ali Javey

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

49 Citations (Scopus)

Abstract

The III-V compound semiconductors exhibit superb electronic and optoelectronic properties. Traditionally, closely lattice-matched epitaxial substrates have been required for the growth of high-quality single-crystal III-V thin films and patterned microstructures. To remove this materials constraint, here we introduce a growth mode that enables direct writing of single-crystalline III-Vâ €™ s on amorphous substrates, thus further expanding their utility for various applications. The process utilizes templated liquid-phase crystal growth that results in user-tunable, patterned micro and nanostructures of single-crystalline III-Vâ €™ s of up to tens of micrometres in lateral dimensions. InP is chosen as a model material system owing to its technological importance. The patterned InP single crystals are configured as high-performance transistors and photodetectors directly on amorphous SiO 2 growth substrates, with performance matching state-of-the-art epitaxially grown devices. The work presents an important advance towards universal integration of III-Vâ €™ s on application-specific substrates by direct growth.

Original language	English
Article number	10502
Journal	Nature communications
Volume	7
DOIs	https://doi.org/10.1038/ncomms10502
Publication status	Published - 2016 Jan 27

All Science Journal Classification (ASJC) codes

General Chemistry
General Biochemistry,Genetics and Molecular Biology
General Physics and Astronomy

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Chen, K., Kapadia, R., Harker, A., Desai, S., Seuk Kang, J., Chuang, S., Tosun, M., Sutter-Fella, C. M., Tsang, M., Zeng, Y., Kiriya, D., Hazra, J., Madhvapathy, S. R., Hettick, M., Chen, Y. Z., Mastandrea, J., Amani, M., Cabrini, S., Chueh, Y. L., ... Javey, A. (2016). Direct growth of single-crystalline III-V semiconductors on amorphous substrates. Nature communications, 7, Article 10502. https://doi.org/10.1038/ncomms10502

@article{62753fcb08924719aa27f170f91e4b7c,

title = "Direct growth of single-crystalline III-V semiconductors on amorphous substrates",

abstract = "The III-V compound semiconductors exhibit superb electronic and optoelectronic properties. Traditionally, closely lattice-matched epitaxial substrates have been required for the growth of high-quality single-crystal III-V thin films and patterned microstructures. To remove this materials constraint, here we introduce a growth mode that enables direct writing of single-crystalline III-V{\^a} €{\texttrademark} s on amorphous substrates, thus further expanding their utility for various applications. The process utilizes templated liquid-phase crystal growth that results in user-tunable, patterned micro and nanostructures of single-crystalline III-V{\^a} €{\texttrademark} s of up to tens of micrometres in lateral dimensions. InP is chosen as a model material system owing to its technological importance. The patterned InP single crystals are configured as high-performance transistors and photodetectors directly on amorphous SiO 2 growth substrates, with performance matching state-of-the-art epitaxially grown devices. The work presents an important advance towards universal integration of III-V{\^a} €{\texttrademark} s on application-specific substrates by direct growth.",

author = "Kevin Chen and Rehan Kapadia and Audrey Harker and Sujay Desai and {Seuk Kang}, Jeong and Steven Chuang and Mahmut Tosun and Sutter-Fella, {Carolin M.} and Michael Tsang and Yuping Zeng and Daisuke Kiriya and Jubin Hazra and Madhvapathy, {Surabhi Rao} and Mark Hettick and Chen, {Yu Ze} and James Mastandrea and Matin Amani and Stefano Cabrini and Chueh, {Yu Lun} and Ager, {Joel W.} and Chrzan, {Daryl C.} and Ali Javey",

note = "Funding Information: This work was supported by the Electronic Materials Program, funded by the Director, Office of Science, Office of Basic Energy Sciences, Material Sciences and Engineering Division of the U.S. Department of Energy under Contract No. DE-AC02-05CH11231. X-ray diffraction and cross-sectional SEM imaging were performed at The Molecular Foundry under Contract No. DE-AC02-05CH11231. We thank J. Bullock, D.-H. Lien, H. Ota and M. Zheng for their help.",

year = "2016",

month = jan,

day = "27",

doi = "10.1038/ncomms10502",

language = "English",

volume = "7",

journal = "Nature communications",

issn = "2041-1723",

publisher = "Nature Research",

}

Chen, K, Kapadia, R, Harker, A, Desai, S, Seuk Kang, J, Chuang, S, Tosun, M, Sutter-Fella, CM, Tsang, M, Zeng, Y, Kiriya, D, Hazra, J, Madhvapathy, SR, Hettick, M, Chen, YZ, Mastandrea, J, Amani, M, Cabrini, S, Chueh, YL, Ager, JW, Chrzan, DC & Javey, A 2016, 'Direct growth of single-crystalline III-V semiconductors on amorphous substrates', Nature communications, vol. 7, 10502. https://doi.org/10.1038/ncomms10502

TY - JOUR

T1 - Direct growth of single-crystalline III-V semiconductors on amorphous substrates

AU - Chen, Kevin

AU - Kapadia, Rehan

AU - Harker, Audrey

AU - Desai, Sujay

AU - Seuk Kang, Jeong

AU - Chuang, Steven

AU - Tosun, Mahmut

AU - Sutter-Fella, Carolin M.

AU - Tsang, Michael

AU - Zeng, Yuping

AU - Kiriya, Daisuke

AU - Hazra, Jubin

AU - Madhvapathy, Surabhi Rao

AU - Hettick, Mark

AU - Chen, Yu Ze

AU - Mastandrea, James

AU - Amani, Matin

AU - Cabrini, Stefano

AU - Chueh, Yu Lun

AU - Ager, Joel W.

AU - Chrzan, Daryl C.

AU - Javey, Ali

N1 - Funding Information: This work was supported by the Electronic Materials Program, funded by the Director, Office of Science, Office of Basic Energy Sciences, Material Sciences and Engineering Division of the U.S. Department of Energy under Contract No. DE-AC02-05CH11231. X-ray diffraction and cross-sectional SEM imaging were performed at The Molecular Foundry under Contract No. DE-AC02-05CH11231. We thank J. Bullock, D.-H. Lien, H. Ota and M. Zheng for their help.

PY - 2016/1/27

Y1 - 2016/1/27

N2 - The III-V compound semiconductors exhibit superb electronic and optoelectronic properties. Traditionally, closely lattice-matched epitaxial substrates have been required for the growth of high-quality single-crystal III-V thin films and patterned microstructures. To remove this materials constraint, here we introduce a growth mode that enables direct writing of single-crystalline III-Vâ €™ s on amorphous substrates, thus further expanding their utility for various applications. The process utilizes templated liquid-phase crystal growth that results in user-tunable, patterned micro and nanostructures of single-crystalline III-Vâ €™ s of up to tens of micrometres in lateral dimensions. InP is chosen as a model material system owing to its technological importance. The patterned InP single crystals are configured as high-performance transistors and photodetectors directly on amorphous SiO 2 growth substrates, with performance matching state-of-the-art epitaxially grown devices. The work presents an important advance towards universal integration of III-Vâ €™ s on application-specific substrates by direct growth.

AB - The III-V compound semiconductors exhibit superb electronic and optoelectronic properties. Traditionally, closely lattice-matched epitaxial substrates have been required for the growth of high-quality single-crystal III-V thin films and patterned microstructures. To remove this materials constraint, here we introduce a growth mode that enables direct writing of single-crystalline III-Vâ €™ s on amorphous substrates, thus further expanding their utility for various applications. The process utilizes templated liquid-phase crystal growth that results in user-tunable, patterned micro and nanostructures of single-crystalline III-Vâ €™ s of up to tens of micrometres in lateral dimensions. InP is chosen as a model material system owing to its technological importance. The patterned InP single crystals are configured as high-performance transistors and photodetectors directly on amorphous SiO 2 growth substrates, with performance matching state-of-the-art epitaxially grown devices. The work presents an important advance towards universal integration of III-Vâ €™ s on application-specific substrates by direct growth.

UR - http://www.scopus.com/inward/record.url?scp=84955453768&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84955453768&partnerID=8YFLogxK

U2 - 10.1038/ncomms10502

DO - 10.1038/ncomms10502

M3 - Article

AN - SCOPUS:84955453768

SN - 2041-1723

VL - 7

JO - Nature communications

JF - Nature communications

M1 - 10502

ER -

Direct growth of single-crystalline III-V semiconductors on amorphous substrates

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