Direct MBE growth of SiGe dots on ordered mesoporous glass-coated Si substrate

Y. S. Tang, S. J. Cai, G. L. Jin, K. L. Wang, H. M. Soyez, B. S. Dunn

Research output: Contribution to journalArticlepeer-review

7 Citations (Scopus)

Abstract

In this paper, we propose a new method for preparing high-density nanometer-scale SiGe quantum dots on ordered mesoporous sol gel silica-coated Si substrate. It was found that a SiGe dot matrix has formed in the porous silica media, and a second layer of bigger overgrown SiGe dots was also observable. X-Ray diffraction measurements suggest the formation of the buried dots. Preliminary photoluminescence experiments show promising emission related to the buried dots.

Original languageEnglish
Pages (from-to)76-80
Number of pages5
JournalThin Solid Films
Volume321
Issue number1-2
DOIs
Publication statusPublished - 1998 May 26

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

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