Direct MBE growth of SiGe dots on ordered mesoporous glass-coated Si substrate

Y. S. Tang; S. J. Cai; G. L. Jin; K. L. Wang; H. M. Soyez; B. S. Dunn

doi:10.1016/S0040-6090(98)00447-7

Direct MBE growth of SiGe dots on ordered mesoporous glass-coated Si substrate

Y. S. Tang, S. J. Cai, G. L. Jin, K. L. Wang, H. M. Soyez, B. S. Dunn

College of Electrical Engineering and Computer Science

Research output: Contribution to journal › Article › peer-review

7 Citations (Scopus)

Abstract

In this paper, we propose a new method for preparing high-density nanometer-scale SiGe quantum dots on ordered mesoporous sol gel silica-coated Si substrate. It was found that a SiGe dot matrix has formed in the porous silica media, and a second layer of bigger overgrown SiGe dots was also observable. X-Ray diffraction measurements suggest the formation of the buried dots. Preliminary photoluminescence experiments show promising emission related to the buried dots.

Original language	English
Pages (from-to)	76-80
Number of pages	5
Journal	Thin Solid Films
Volume	321
Issue number	1-2
DOIs	https://doi.org/10.1016/S0040-6090(98)00447-7
Publication status	Published - 1998 May 26

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Surfaces and Interfaces
Surfaces, Coatings and Films
Metals and Alloys
Materials Chemistry

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10.1016/S0040-6090(98)00447-7

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title = "Direct MBE growth of SiGe dots on ordered mesoporous glass-coated Si substrate",

abstract = "In this paper, we propose a new method for preparing high-density nanometer-scale SiGe quantum dots on ordered mesoporous sol gel silica-coated Si substrate. It was found that a SiGe dot matrix has formed in the porous silica media, and a second layer of bigger overgrown SiGe dots was also observable. X-Ray diffraction measurements suggest the formation of the buried dots. Preliminary photoluminescence experiments show promising emission related to the buried dots.",

author = "Tang, {Y. S.} and Cai, {S. J.} and Jin, {G. L.} and Wang, {K. L.} and Soyez, {H. M.} and Dunn, {B. S.}",

note = "Funding Information: This work was in part supported by SRC, NSF and ARO MURI (low power electronics) programs.",

year = "1998",

month = may,

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doi = "10.1016/S0040-6090(98)00447-7",

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pages = "76--80",

journal = "Thin Solid Films",

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TY - JOUR

T1 - Direct MBE growth of SiGe dots on ordered mesoporous glass-coated Si substrate

AU - Tang, Y. S.

AU - Cai, S. J.

AU - Jin, G. L.

AU - Wang, K. L.

AU - Soyez, H. M.

AU - Dunn, B. S.

N1 - Funding Information: This work was in part supported by SRC, NSF and ARO MURI (low power electronics) programs.

PY - 1998/5/26

Y1 - 1998/5/26

N2 - In this paper, we propose a new method for preparing high-density nanometer-scale SiGe quantum dots on ordered mesoporous sol gel silica-coated Si substrate. It was found that a SiGe dot matrix has formed in the porous silica media, and a second layer of bigger overgrown SiGe dots was also observable. X-Ray diffraction measurements suggest the formation of the buried dots. Preliminary photoluminescence experiments show promising emission related to the buried dots.

AB - In this paper, we propose a new method for preparing high-density nanometer-scale SiGe quantum dots on ordered mesoporous sol gel silica-coated Si substrate. It was found that a SiGe dot matrix has formed in the porous silica media, and a second layer of bigger overgrown SiGe dots was also observable. X-Ray diffraction measurements suggest the formation of the buried dots. Preliminary photoluminescence experiments show promising emission related to the buried dots.

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U2 - 10.1016/S0040-6090(98)00447-7

DO - 10.1016/S0040-6090(98)00447-7

M3 - Article

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SN - 0040-6090

VL - 321

SP - 76

EP - 80

JO - Thin Solid Films

JF - Thin Solid Films

IS - 1-2

ER -

Direct MBE growth of SiGe dots on ordered mesoporous glass-coated Si substrate

Abstract

All Science Journal Classification (ASJC) codes

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