Direct measurement of strain in a Ge island on Si(001)

Peter D. Miller; Chuan Pu Liu; William L. Henstrom; J. Murray Gibson; Y. Huang; P. Zhang; T. I. Kamins; D. P. Basile; R. Stanley Williams

doi:10.1063/1.124272

Direct measurement of strain in a Ge island on Si(001)

Peter D. Miller, Chuan Pu Liu, William L. Henstrom, J. Murray Gibson, Y. Huang, P. Zhang, T. I. Kamins, D. P. Basile, R. Stanley Williams

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

43 Citations (Scopus)

Abstract

We report on a direct measurement of the strain in a single Ge "quantum dot" island grown on Si by chemical vapor deposition. This transmission electron microscopy method is reliable: without the need for detailed modeling of the strain field, it measures the maximum in-plane displacement. Good agreement is found between the experimental value of 0.86±0.17% average strain and finite element simulations assuming pure Ge. Thus no evidence of significant alloying with Si is observed.

Original language	English
Pages (from-to)	46-48
Number of pages	3
Journal	Applied Physics Letters
Volume	75
Issue number	1
DOIs	https://doi.org/10.1063/1.124272
Publication status	Published - 1999 Jul 5

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.124272

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AU - Miller, Peter D.

AU - Liu, Chuan Pu

AU - Henstrom, William L.

AU - Gibson, J. Murray

AU - Huang, Y.

AU - Zhang, P.

AU - Kamins, T. I.

AU - Basile, D. P.

AU - Williams, R. Stanley

PY - 1999/7/5

Y1 - 1999/7/5

N2 - We report on a direct measurement of the strain in a single Ge "quantum dot" island grown on Si by chemical vapor deposition. This transmission electron microscopy method is reliable: without the need for detailed modeling of the strain field, it measures the maximum in-plane displacement. Good agreement is found between the experimental value of 0.86±0.17% average strain and finite element simulations assuming pure Ge. Thus no evidence of significant alloying with Si is observed.

AB - We report on a direct measurement of the strain in a single Ge "quantum dot" island grown on Si by chemical vapor deposition. This transmission electron microscopy method is reliable: without the need for detailed modeling of the strain field, it measures the maximum in-plane displacement. Good agreement is found between the experimental value of 0.86±0.17% average strain and finite element simulations assuming pure Ge. Thus no evidence of significant alloying with Si is observed.

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JF - Applied Physics Letters

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Direct measurement of strain in a Ge island on Si(001)

Abstract

All Science Journal Classification (ASJC) codes

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