Direct measurement of strain in a Ge island on Si(001)

Peter D. Miller, Chuan Pu Liu, William L. Henstrom, J. Murray Gibson, Y. Huang, P. Zhang, T. I. Kamins, D. P. Basile, R. Stanley Williams

Research output: Contribution to journalArticlepeer-review

43 Citations (Scopus)


We report on a direct measurement of the strain in a single Ge "quantum dot" island grown on Si by chemical vapor deposition. This transmission electron microscopy method is reliable: without the need for detailed modeling of the strain field, it measures the maximum in-plane displacement. Good agreement is found between the experimental value of 0.86±0.17% average strain and finite element simulations assuming pure Ge. Thus no evidence of significant alloying with Si is observed.

Original languageEnglish
Pages (from-to)46-48
Number of pages3
JournalApplied Physics Letters
Issue number1
Publication statusPublished - 1999 Jul 5

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)


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