Direct observation of amophization in load rate dependent nanoindentation studies of crystalline Si

C. R. Das; S. Dhara; Yeau Ren Jeng; Ping Chi Tsai; H. C. Hsu; Baldev Raj; A. K. Bhaduri; S. K. Albert; A. K. Tyagi; L. C. Chen; K. H. Chen

doi:10.1063/1.3456380

Direct observation of amophization in load rate dependent nanoindentation studies of crystalline Si

C. R. Das, S. Dhara, Yeau Ren Jeng, Ping Chi Tsai, H. C. Hsu, Baldev Raj, A. K. Bhaduri, S. K. Albert, A. K. Tyagi, L. C. Chen, K. H. Chen

Research output: Contribution to journal › Article › peer-review

19 Citations (Scopus)

Abstract

Indentation at very low load rate showed region of constant volume with releasing load in crystalline (c-) Si, indicating a direct observation of liquidlike amorphous phase which is incompressible under pressure. Signature of amorphization is also confirmed from load dependent indentation study where increased amount of amorphized phase is made responsible for the increasing elastic recovery of the sample with increasing load. Ex situ Raman study confirmed the presence of amorphous phase at the center of indentation. The molecular dynamic simulation has been employed to demonstrate that the effect of indentation velocities has a direct influence on c-Si during nanoindentation processes.

Original language	English
Article number	253113
Journal	Applied Physics Letters
Volume	96
Issue number	25
DOIs	https://doi.org/10.1063/1.3456380
Publication status	Published - 2010 Jun 21

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.3456380

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@article{60f2084f01db47858f5278fae21de8fc,

title = "Direct observation of amophization in load rate dependent nanoindentation studies of crystalline Si",

abstract = "Indentation at very low load rate showed region of constant volume with releasing load in crystalline (c-) Si, indicating a direct observation of liquidlike amorphous phase which is incompressible under pressure. Signature of amorphization is also confirmed from load dependent indentation study where increased amount of amorphized phase is made responsible for the increasing elastic recovery of the sample with increasing load. Ex situ Raman study confirmed the presence of amorphous phase at the center of indentation. The molecular dynamic simulation has been employed to demonstrate that the effect of indentation velocities has a direct influence on c-Si during nanoindentation processes.",

author = "Das, {C. R.} and S. Dhara and Jeng, {Yeau Ren} and Tsai, {Ping Chi} and Hsu, {H. C.} and Baldev Raj and Bhaduri, {A. K.} and Albert, {S. K.} and Tyagi, {A. K.} and Chen, {L. C.} and Chen, {K. H.}",

year = "2010",

month = jun,

day = "21",

doi = "10.1063/1.3456380",

language = "English",

volume = "96",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "25",

}

Direct observation of amophization in load rate dependent nanoindentation studies of crystalline Si. / Das, C. R.; Dhara, S.; Jeng, Yeau Ren; Tsai, Ping Chi; Hsu, H. C.; Raj, Baldev; Bhaduri, A. K.; Albert, S. K.; Tyagi, A. K.; Chen, L. C.; Chen, K. H.

In: Applied Physics Letters, Vol. 96, No. 25, 253113, 21.06.2010.

Research output: Contribution to journal › Article › peer-review

TY - JOUR

T1 - Direct observation of amophization in load rate dependent nanoindentation studies of crystalline Si

AU - Das, C. R.

AU - Dhara, S.

AU - Jeng, Yeau Ren

AU - Tsai, Ping Chi

AU - Hsu, H. C.

AU - Raj, Baldev

AU - Bhaduri, A. K.

AU - Albert, S. K.

AU - Tyagi, A. K.

AU - Chen, L. C.

AU - Chen, K. H.

PY - 2010/6/21

Y1 - 2010/6/21

N2 - Indentation at very low load rate showed region of constant volume with releasing load in crystalline (c-) Si, indicating a direct observation of liquidlike amorphous phase which is incompressible under pressure. Signature of amorphization is also confirmed from load dependent indentation study where increased amount of amorphized phase is made responsible for the increasing elastic recovery of the sample with increasing load. Ex situ Raman study confirmed the presence of amorphous phase at the center of indentation. The molecular dynamic simulation has been employed to demonstrate that the effect of indentation velocities has a direct influence on c-Si during nanoindentation processes.

AB - Indentation at very low load rate showed region of constant volume with releasing load in crystalline (c-) Si, indicating a direct observation of liquidlike amorphous phase which is incompressible under pressure. Signature of amorphization is also confirmed from load dependent indentation study where increased amount of amorphized phase is made responsible for the increasing elastic recovery of the sample with increasing load. Ex situ Raman study confirmed the presence of amorphous phase at the center of indentation. The molecular dynamic simulation has been employed to demonstrate that the effect of indentation velocities has a direct influence on c-Si during nanoindentation processes.

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