Abstract
Oxidation of Si1-xGex films has been carried out by direct photo chemical vapor deposition (direct photo-CVD) directly with activated O2 induced by Vacuum-Ultra-Violet (VUV) light radiation. The Auger electron spectroscopy profiles show that no Ge-pileup layer at the oxide/Si1-xGex interface is observed after VUV-induced Si1-xGex oxidation process. The X-ray photoelectron spectroscopy analysis of the samples reveals that Si and Ge are oxidized simultaneously in oxidation process and a mixed oxide layer consisting both SiO2 and GeO2 is formed. This might be the reason that Ge pileup effect is eliminated in this study.
Original language | English |
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Pages (from-to) | L122-L124 |
Journal | Japanese Journal of Applied Physics |
Volume | 37 |
Issue number | 2 PART A |
DOIs | |
Publication status | Published - 1998 Feb 1 |
All Science Journal Classification (ASJC) codes
- Engineering(all)
- Physics and Astronomy(all)