Oxidation of Si1-xGex films has been carried out by direct photo chemical vapor deposition (direct photo-CVD) directly with activated O2 induced by Vacuum-Ultra-Violet (VUV) light radiation. The Auger electron spectroscopy profiles show that no Ge-pileup layer at the oxide/Si1-xGex interface is observed after VUV-induced Si1-xGex oxidation process. The X-ray photoelectron spectroscopy analysis of the samples reveals that Si and Ge are oxidized simultaneously in oxidation process and a mixed oxide layer consisting both SiO2 and GeO2 is formed. This might be the reason that Ge pileup effect is eliminated in this study.
|Journal||Japanese Journal of Applied Physics, Part 2: Letters|
|Issue number||2 PART A|
|Publication status||Published - 1998 Feb 1|
All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)
- Physics and Astronomy(all)