Direct oxidation of si1-xGex layers using vacuum-ultra-violet light radiation in oxygen

Liang Po Chen, Yuen Chang Chan, Shoou Jinn Chang, Guo Wei Huang, Chun Yen Chang

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14 Citations (Scopus)


Oxidation of Si1-xGex films has been carried out by direct photo chemical vapor deposition (direct photo-CVD) directly with activated O2 induced by Vacuum-Ultra-Violet (VUV) light radiation. The Auger electron spectroscopy profiles show that no Ge-pileup layer at the oxide/Si1-xGex interface is observed after VUV-induced Si1-xGex oxidation process. The X-ray photoelectron spectroscopy analysis of the samples reveals that Si and Ge are oxidized simultaneously in oxidation process and a mixed oxide layer consisting both SiO2 and GeO2 is formed. This might be the reason that Ge pileup effect is eliminated in this study.

Original languageEnglish
Pages (from-to)L122-L124
JournalJapanese Journal of Applied Physics, Part 2: Letters
Issue number2 PART A
Publication statusPublished - 1998 Feb 1

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy (miscellaneous)
  • Physics and Astronomy(all)


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