Direct oxidation of si1-xGex layers using vacuum-ultra-violet light radiation in oxygen

Liang Po Chen; Yuen Chang Chan; Shoou Jinn Chang; Guo Wei Huang; Chun Yen Chang

doi:10.1143/jjap.37.l122

Direct oxidation of si_1-xGe_x layers using vacuum-ultra-violet light radiation in oxygen

Liang Po Chen
, Yuen Chang Chan
, Shoou Jinn Chang
, Guo Wei Huang
, Chun Yen Chang

Institute of Microelectronics

Research output: Contribution to journal › Article › peer-review

15 Citations (Scopus)

Abstract

Oxidation of Si_1-xGe_x films has been carried out by direct photo chemical vapor deposition (direct photo-CVD) directly with activated O₂ induced by Vacuum-Ultra-Violet (VUV) light radiation. The Auger electron spectroscopy profiles show that no Ge-pileup layer at the oxide/Si_1-xGe_x interface is observed after VUV-induced Si_1-xGe_x oxidation process. The X-ray photoelectron spectroscopy analysis of the samples reveals that Si and Ge are oxidized simultaneously in oxidation process and a mixed oxide layer consisting both SiO₂ and GeO₂ is formed. This might be the reason that Ge pileup effect is eliminated in this study.

Original language	English
Pages (from-to)	L122-L124
Journal	Japanese Journal of Applied Physics
Volume	37
Issue number	2 PART A
DOIs	https://doi.org/10.1143/jjap.37.l122
Publication status	Published - 1998 Feb 1

All Science Journal Classification (ASJC) codes

General Engineering
General Physics and Astronomy

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title = "Direct oxidation of si1-xGex layers using vacuum-ultra-violet light radiation in oxygen",

abstract = "Oxidation of Si1-xGex films has been carried out by direct photo chemical vapor deposition (direct photo-CVD) directly with activated O2 induced by Vacuum-Ultra-Violet (VUV) light radiation. The Auger electron spectroscopy profiles show that no Ge-pileup layer at the oxide/Si1-xGex interface is observed after VUV-induced Si1-xGex oxidation process. The X-ray photoelectron spectroscopy analysis of the samples reveals that Si and Ge are oxidized simultaneously in oxidation process and a mixed oxide layer consisting both SiO2 and GeO2 is formed. This might be the reason that Ge pileup effect is eliminated in this study.",

author = "Chen, \{Liang Po\} and Chan, \{Yuen Chang\} and Chang, \{Shoou Jinn\} and Huang, \{Guo Wei\} and Chang, \{Chun Yen\}",

year = "1998",

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doi = "10.1143/jjap.37.l122",

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T1 - Direct oxidation of si1-xGex layers using vacuum-ultra-violet light radiation in oxygen

AU - Chen, Liang Po

AU - Chan, Yuen Chang

AU - Chang, Shoou Jinn

AU - Huang, Guo Wei

AU - Chang, Chun Yen

PY - 1998/2/1

Y1 - 1998/2/1

N2 - Oxidation of Si1-xGex films has been carried out by direct photo chemical vapor deposition (direct photo-CVD) directly with activated O2 induced by Vacuum-Ultra-Violet (VUV) light radiation. The Auger electron spectroscopy profiles show that no Ge-pileup layer at the oxide/Si1-xGex interface is observed after VUV-induced Si1-xGex oxidation process. The X-ray photoelectron spectroscopy analysis of the samples reveals that Si and Ge are oxidized simultaneously in oxidation process and a mixed oxide layer consisting both SiO2 and GeO2 is formed. This might be the reason that Ge pileup effect is eliminated in this study.

AB - Oxidation of Si1-xGex films has been carried out by direct photo chemical vapor deposition (direct photo-CVD) directly with activated O2 induced by Vacuum-Ultra-Violet (VUV) light radiation. The Auger electron spectroscopy profiles show that no Ge-pileup layer at the oxide/Si1-xGex interface is observed after VUV-induced Si1-xGex oxidation process. The X-ray photoelectron spectroscopy analysis of the samples reveals that Si and Ge are oxidized simultaneously in oxidation process and a mixed oxide layer consisting both SiO2 and GeO2 is formed. This might be the reason that Ge pileup effect is eliminated in this study.

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JO - Japanese Journal of Applied Physics

JF - Japanese Journal of Applied Physics

IS - 2 PART A

ER -

Direct oxidation of si_1-xGe_x layers using vacuum-ultra-violet light radiation in oxygen

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