Direct structural evidences of Mn11Ge8 and Mn 5Ge2 clusters in Ge0.96Mn0.04 thin films

Yong Wang; Jin Zou; Zuoming Zhao; Xinhai Han; Xiaoyu Zhou; Kang L. Wang

doi:10.1063/1.2884527

Direct structural evidences of Mn₁₁Ge₈ and Mn ₅Ge₂ clusters in Ge_0.96Mn_0.04 thin films

Yong Wang, Jin Zou, Zuoming Zhao, Xinhai Han, Xiaoyu Zhou, Kang L. Wang

College of Electrical Engineering and Computer Science

Research output: Contribution to journal › Article › peer-review

71 Citations (Scopus)

Abstract

Mn-rich clusters in Mn-doped Ge thin films epitaxially grown on Ge (001) have been investigated by various transmission electron microscopy techniques. Both the mysterious Mn11 Ge8 and the hexagonal Mn5 Ge2 (a=0.72 nm and c=1.3 nm) clusters were confirmed to coexist in the thicker Ge0.96 Mn0.04 film (80 nm). Their possible formation mechanism is attributed to the existence of ordered stacking faults. The fact that no Mn-rich clusters found in thinner films (<=40 nm) suggests that, for a given Mn concentration and growth/annealing condition, a critical thickness exists for the formation of Mn-rich clusters.

Original language	English
Article number	101913
Journal	Applied Physics Letters
Volume	92
Issue number	10
DOIs	https://doi.org/10.1063/1.2884527
Publication status	Published - 2008

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.2884527

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title = "Direct structural evidences of Mn11Ge8 and Mn 5Ge2 clusters in Ge0.96Mn0.04 thin films",

abstract = "Mn-rich clusters in Mn-doped Ge thin films epitaxially grown on Ge (001) have been investigated by various transmission electron microscopy techniques. Both the mysterious Mn11 Ge8 and the hexagonal Mn5 Ge2 (a=0.72 nm and c=1.3 nm) clusters were confirmed to coexist in the thicker Ge0.96 Mn0.04 film (80 nm). Their possible formation mechanism is attributed to the existence of ordered stacking faults. The fact that no Mn-rich clusters found in thinner films (<=40 nm) suggests that, for a given Mn concentration and growth/annealing condition, a critical thickness exists for the formation of Mn-rich clusters.",

author = "Yong Wang and Jin Zou and Zuoming Zhao and Xinhai Han and Xiaoyu Zhou and Wang, {Kang L.}",

note = "Funding Information: The Australia Research Council, Focus Center Research Program—Center on Functional Engineered Nano Architectonics, and Western Institution of Nanoelectronics are acknowledged for their financial support of this project. ",

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journal = "Applied Physics Letters",

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T1 - Direct structural evidences of Mn11Ge8 and Mn 5Ge2 clusters in Ge0.96Mn0.04 thin films

AU - Wang, Yong

AU - Zou, Jin

AU - Zhao, Zuoming

AU - Han, Xinhai

AU - Zhou, Xiaoyu

AU - Wang, Kang L.

N1 - Funding Information: The Australia Research Council, Focus Center Research Program—Center on Functional Engineered Nano Architectonics, and Western Institution of Nanoelectronics are acknowledged for their financial support of this project.

PY - 2008

Y1 - 2008

N2 - Mn-rich clusters in Mn-doped Ge thin films epitaxially grown on Ge (001) have been investigated by various transmission electron microscopy techniques. Both the mysterious Mn11 Ge8 and the hexagonal Mn5 Ge2 (a=0.72 nm and c=1.3 nm) clusters were confirmed to coexist in the thicker Ge0.96 Mn0.04 film (80 nm). Their possible formation mechanism is attributed to the existence of ordered stacking faults. The fact that no Mn-rich clusters found in thinner films (<=40 nm) suggests that, for a given Mn concentration and growth/annealing condition, a critical thickness exists for the formation of Mn-rich clusters.

AB - Mn-rich clusters in Mn-doped Ge thin films epitaxially grown on Ge (001) have been investigated by various transmission electron microscopy techniques. Both the mysterious Mn11 Ge8 and the hexagonal Mn5 Ge2 (a=0.72 nm and c=1.3 nm) clusters were confirmed to coexist in the thicker Ge0.96 Mn0.04 film (80 nm). Their possible formation mechanism is attributed to the existence of ordered stacking faults. The fact that no Mn-rich clusters found in thinner films (<=40 nm) suggests that, for a given Mn concentration and growth/annealing condition, a critical thickness exists for the formation of Mn-rich clusters.

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Direct structural evidences of Mn₁₁Ge₈ and Mn ₅Ge₂ clusters in Ge_0.96Mn_0.04 thin films

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