TY - JOUR
T1 - Direct synthesis of potassium tantalate thin films by hydrothermal-electrochemical method
AU - Wu, Z. B.
AU - Tsukada, T.
AU - Yoshimura, M.
N1 - Funding Information:
This work was supported by the Japanese Society for the Promotion of Science (JSPS) on the “Research for the Future” Program No. 96R06901. The authors would like to thank Mr. T. Watanabe and Mr. K. Sakai for experimental assistance and Dr. K-S. Han for valuable discussions.
PY - 2000
Y1 - 2000
N2 - Single-phase potassium tantalate (KT) thin films with excellent film flatness and crystallinity have been synthesized on a tantalum substrate in 2.0 M KOH solution at 150°C by a hydrothermal-electrochemical method under a galvanostatic condition. A pyrochlore structure of the thin KT films was identified by XRD pattern analysis. The films show good adherence to the substrate and the film thickness could be as much as 2 μm. The electrical properties of the films were characterized through the determination of capacitance by electrochemical impedance spectroscopy at room temperature. Dielectric constants yielded from capacitance measurements have been calculated to have values higher than 300. The dependence of cell voltage on reaction time reflects the mechanism of film formation. The preparation conditions and morphology of the films were consistent with the proposed film formation mechanism.
AB - Single-phase potassium tantalate (KT) thin films with excellent film flatness and crystallinity have been synthesized on a tantalum substrate in 2.0 M KOH solution at 150°C by a hydrothermal-electrochemical method under a galvanostatic condition. A pyrochlore structure of the thin KT films was identified by XRD pattern analysis. The films show good adherence to the substrate and the film thickness could be as much as 2 μm. The electrical properties of the films were characterized through the determination of capacitance by electrochemical impedance spectroscopy at room temperature. Dielectric constants yielded from capacitance measurements have been calculated to have values higher than 300. The dependence of cell voltage on reaction time reflects the mechanism of film formation. The preparation conditions and morphology of the films were consistent with the proposed film formation mechanism.
UR - https://www.scopus.com/pages/publications/0033729538
UR - https://www.scopus.com/pages/publications/0033729538#tab=citedBy
U2 - 10.1023/A:1004703420342
DO - 10.1023/A:1004703420342
M3 - Article
AN - SCOPUS:0033729538
SN - 0022-2461
VL - 35
SP - 2833
EP - 2839
JO - Journal of Materials Science
JF - Journal of Materials Science
IS - 11
ER -