Discrete dopant fluctuation in limited-width FinFETs for VLSI circuit application: A theoretical study

Meng-Hsueh Chiang, Jeng Nan Lin, Keunwoo Kim, Ching Te Chuang

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

The random dopant fluctuation (RDF) in double-gate (DG) devices is investigated via physical analyses and numerical simulations. Our results show that extremely scaled devices, especially FinFETs with narrow device width (fin height) in each individual fin, are susceptible to RDF effects. Even in an updoped silicon channel, the existence of unwanted impurity dopant will still have a significant impact on device characteristics. Design implication from RDF is also discussed.

Original languageEnglish
Title of host publication2006 IEEE International Conference on Integrated Circuit Design and Technology, ICICDT'06
Publication statusPublished - 2006 Dec 1
EventIntegrated Circuit Design and Technology, 2006. ICICDT '06. 2006 IEEE International Conference - Padova, Italy
Duration: 2006 May 242006 May 26

Publication series

Name2006 IEEE International Conference on Integrated Circuit Design and Technology, ICICDT'06

Other

OtherIntegrated Circuit Design and Technology, 2006. ICICDT '06. 2006 IEEE International Conference
CountryItaly
CityPadova
Period06-05-2406-05-26

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

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    Chiang, M-H., Lin, J. N., Kim, K., & Chuang, C. T. (2006). Discrete dopant fluctuation in limited-width FinFETs for VLSI circuit application: A theoretical study. In 2006 IEEE International Conference on Integrated Circuit Design and Technology, ICICDT'06 [1669387] (2006 IEEE International Conference on Integrated Circuit Design and Technology, ICICDT'06).