TY - GEN
T1 - Discrete dopant fluctuation in limited-width FinFETs for VLSI circuit application
T2 - Integrated Circuit Design and Technology, 2006. ICICDT '06. 2006 IEEE International Conference
AU - Chiang, Meng-Hsueh
AU - Lin, Jeng Nan
AU - Kim, Keunwoo
AU - Chuang, Ching Te
PY - 2006/12/1
Y1 - 2006/12/1
N2 - The random dopant fluctuation (RDF) in double-gate (DG) devices is investigated via physical analyses and numerical simulations. Our results show that extremely scaled devices, especially FinFETs with narrow device width (fin height) in each individual fin, are susceptible to RDF effects. Even in an updoped silicon channel, the existence of unwanted impurity dopant will still have a significant impact on device characteristics. Design implication from RDF is also discussed.
AB - The random dopant fluctuation (RDF) in double-gate (DG) devices is investigated via physical analyses and numerical simulations. Our results show that extremely scaled devices, especially FinFETs with narrow device width (fin height) in each individual fin, are susceptible to RDF effects. Even in an updoped silicon channel, the existence of unwanted impurity dopant will still have a significant impact on device characteristics. Design implication from RDF is also discussed.
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M3 - Conference contribution
AN - SCOPUS:37649028470
SN - 1424400988
SN - 9781424400980
T3 - 2006 IEEE International Conference on Integrated Circuit Design and Technology, ICICDT'06
BT - 2006 IEEE International Conference on Integrated Circuit Design and Technology, ICICDT'06
Y2 - 24 May 2006 through 26 May 2006
ER -