Discrete dopant fluctuation in limited-width FinFETs for VLSI circuit application: A theoretical study

Meng-Hsueh Chiang; Jeng Nan Lin; Keunwoo Kim; Ching Te Chuang

Discrete dopant fluctuation in limited-width FinFETs for VLSI circuit application: A theoretical study

Meng-Hsueh Chiang, Jeng Nan Lin, Keunwoo Kim, Ching Te Chuang

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

The random dopant fluctuation (RDF) in double-gate (DG) devices is investigated via physical analyses and numerical simulations. Our results show that extremely scaled devices, especially FinFETs with narrow device width (fin height) in each individual fin, are susceptible to RDF effects. Even in an updoped silicon channel, the existence of unwanted impurity dopant will still have a significant impact on device characteristics. Design implication from RDF is also discussed.

Original language	English
Title of host publication	2006 IEEE International Conference on Integrated Circuit Design and Technology, ICICDT'06
Publication status	Published - 2006 Dec 1
Event	Integrated Circuit Design and Technology, 2006. ICICDT '06. 2006 IEEE International Conference - Padova, Italy Duration: 2006 May 24 → 2006 May 26

Publication series

Name	2006 IEEE International Conference on Integrated Circuit Design and Technology, ICICDT'06

Other

Other	Integrated Circuit Design and Technology, 2006. ICICDT '06. 2006 IEEE International Conference
Country	Italy
City	Padova
Period	06-05-24 → 06-05-26

All Science Journal Classification (ASJC) codes

Electrical and Electronic Engineering

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Chiang, M-H., Lin, J. N., Kim, K., & Chuang, C. T. (2006). Discrete dopant fluctuation in limited-width FinFETs for VLSI circuit application: A theoretical study. In 2006 IEEE International Conference on Integrated Circuit Design and Technology, ICICDT'06 [1669387] (2006 IEEE International Conference on Integrated Circuit Design and Technology, ICICDT'06).

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title = "Discrete dopant fluctuation in limited-width FinFETs for VLSI circuit application: A theoretical study",

abstract = "The random dopant fluctuation (RDF) in double-gate (DG) devices is investigated via physical analyses and numerical simulations. Our results show that extremely scaled devices, especially FinFETs with narrow device width (fin height) in each individual fin, are susceptible to RDF effects. Even in an updoped silicon channel, the existence of unwanted impurity dopant will still have a significant impact on device characteristics. Design implication from RDF is also discussed.",

author = "Meng-Hsueh Chiang and Lin, {Jeng Nan} and Keunwoo Kim and Chuang, {Ching Te}",

year = "2006",

month = dec,

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language = "English",

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series = "2006 IEEE International Conference on Integrated Circuit Design and Technology, ICICDT'06",

booktitle = "2006 IEEE International Conference on Integrated Circuit Design and Technology, ICICDT'06",

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Chiang, M-H, Lin, JN, Kim, K & Chuang, CT 2006, Discrete dopant fluctuation in limited-width FinFETs for VLSI circuit application: A theoretical study. in 2006 IEEE International Conference on Integrated Circuit Design and Technology, ICICDT'06., 1669387, 2006 IEEE International Conference on Integrated Circuit Design and Technology, ICICDT'06, Integrated Circuit Design and Technology, 2006. ICICDT '06. 2006 IEEE International Conference, Padova, Italy, 06-05-24.

Discrete dopant fluctuation in limited-width FinFETs for VLSI circuit application : A theoretical study. / Chiang, Meng-Hsueh; Lin, Jeng Nan; Kim, Keunwoo; Chuang, Ching Te.

2006 IEEE International Conference on Integrated Circuit Design and Technology, ICICDT'06. 2006. 1669387 (2006 IEEE International Conference on Integrated Circuit Design and Technology, ICICDT'06).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

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AU - Chiang, Meng-Hsueh

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N2 - The random dopant fluctuation (RDF) in double-gate (DG) devices is investigated via physical analyses and numerical simulations. Our results show that extremely scaled devices, especially FinFETs with narrow device width (fin height) in each individual fin, are susceptible to RDF effects. Even in an updoped silicon channel, the existence of unwanted impurity dopant will still have a significant impact on device characteristics. Design implication from RDF is also discussed.

AB - The random dopant fluctuation (RDF) in double-gate (DG) devices is investigated via physical analyses and numerical simulations. Our results show that extremely scaled devices, especially FinFETs with narrow device width (fin height) in each individual fin, are susceptible to RDF effects. Even in an updoped silicon channel, the existence of unwanted impurity dopant will still have a significant impact on device characteristics. Design implication from RDF is also discussed.

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