Discrete impurity dopant fluctuation in multi-fin FinFFTs: 3D simulation-based study

Jeng Nan Lin; Kuo Chih Chan; Chin Yu Chen; Meng-Hsueh Chiang

doi:10.1109/EDSSC.2007.4450190

Discrete impurity dopant fluctuation in multi-fin FinFFTs: 3D simulation-based study

Jeng Nan Lin, Kuo Chih Chan, Chin Yu Chen, Meng-Hsueh Chiang

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

2 Citations (Scopus)

Abstract

This paper presents the assessment of the random dopant fluctuation effects in FinFET technologies with multi-fin configurations. The impact of the discrete dopant effects on advanced device structures having nearly "undoped" channels is investigated via physical analyses and numerical simulations. Our results suggest that both donor and acceptor atoms in the channel can cause a significant impact on device characteristics. Similar discrete dopant effects are observed in the double-gate, FinFET, and triple-gate devices. For applications using multi fins, the discrete dopant effects are shown to be less of concern. Physical insight into FinFET device scaling is discussed as well.

Original language	English
Title of host publication	IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007
Pages	577-580
Number of pages	4
DOIs	https://doi.org/10.1109/EDSSC.2007.4450190
Publication status	Published - 2007 Dec 1
Event	IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007 - Tainan, Taiwan Duration: 2007 Dec 20 → 2007 Dec 22

Publication series

Name	IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007

Other

Other	IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007
Country	Taiwan
City	Tainan
Period	07-12-20 → 07-12-22

All Science Journal Classification (ASJC) codes

Electrical and Electronic Engineering
Electronic, Optical and Magnetic Materials

Access to Document

10.1109/EDSSC.2007.4450190

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Lin, J. N., Chan, K. C., Chen, C. Y., & Chiang, M-H. (2007). Discrete impurity dopant fluctuation in multi-fin FinFFTs: 3D simulation-based study. In IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007 (pp. 577-580). [4450190] (IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007). https://doi.org/10.1109/EDSSC.2007.4450190

@inproceedings{111b46f6a57f4871a9e633d6d99bcb98,

title = "Discrete impurity dopant fluctuation in multi-fin FinFFTs: 3D simulation-based study",

abstract = "This paper presents the assessment of the random dopant fluctuation effects in FinFET technologies with multi-fin configurations. The impact of the discrete dopant effects on advanced device structures having nearly {"}undoped{"} channels is investigated via physical analyses and numerical simulations. Our results suggest that both donor and acceptor atoms in the channel can cause a significant impact on device characteristics. Similar discrete dopant effects are observed in the double-gate, FinFET, and triple-gate devices. For applications using multi fins, the discrete dopant effects are shown to be less of concern. Physical insight into FinFET device scaling is discussed as well.",

author = "Lin, {Jeng Nan} and Chan, {Kuo Chih} and Chen, {Chin Yu} and Meng-Hsueh Chiang",

year = "2007",

month = dec,

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doi = "10.1109/EDSSC.2007.4450190",

language = "English",

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series = "IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007",

pages = "577--580",

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note = "IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007 ; Conference date: 20-12-2007 Through 22-12-2007",

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Lin, JN, Chan, KC, Chen, CY & Chiang, M-H 2007, Discrete impurity dopant fluctuation in multi-fin FinFFTs: 3D simulation-based study. in IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007., 4450190, IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007, pp. 577-580, IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007, Tainan, Taiwan, 07-12-20. https://doi.org/10.1109/EDSSC.2007.4450190

Discrete impurity dopant fluctuation in multi-fin FinFFTs : 3D simulation-based study. / Lin, Jeng Nan; Chan, Kuo Chih; Chen, Chin Yu; Chiang, Meng-Hsueh.

IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007. 2007. p. 577-580 4450190 (IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

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AB - This paper presents the assessment of the random dopant fluctuation effects in FinFET technologies with multi-fin configurations. The impact of the discrete dopant effects on advanced device structures having nearly "undoped" channels is investigated via physical analyses and numerical simulations. Our results suggest that both donor and acceptor atoms in the channel can cause a significant impact on device characteristics. Similar discrete dopant effects are observed in the double-gate, FinFET, and triple-gate devices. For applications using multi fins, the discrete dopant effects are shown to be less of concern. Physical insight into FinFET device scaling is discussed as well.

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