Discrete impurity dopant fluctuation in multi-fin FinFFTs

3D simulation-based study

Jeng Nan Lin, Kuo Chih Chan, Chin Yu Chen, Meng-Hsueh Chiang

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

This paper presents the assessment of the random dopant fluctuation effects in FinFET technologies with multi-fin configurations. The impact of the discrete dopant effects on advanced device structures having nearly "undoped" channels is investigated via physical analyses and numerical simulations. Our results suggest that both donor and acceptor atoms in the channel can cause a significant impact on device characteristics. Similar discrete dopant effects are observed in the double-gate, FinFET, and triple-gate devices. For applications using multi fins, the discrete dopant effects are shown to be less of concern. Physical insight into FinFET device scaling is discussed as well.

Original languageEnglish
Title of host publicationIEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007
Pages577-580
Number of pages4
DOIs
Publication statusPublished - 2007
EventIEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007 - Tainan, Taiwan
Duration: 2007 Dec 202007 Dec 22

Other

OtherIEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007
CountryTaiwan
CityTainan
Period07-12-2007-12-22

Fingerprint

Doping (additives)
Impurities
Atoms
Computer simulation
FinFET

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

Cite this

Lin, J. N., Chan, K. C., Chen, C. Y., & Chiang, M-H. (2007). Discrete impurity dopant fluctuation in multi-fin FinFFTs: 3D simulation-based study. In IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007 (pp. 577-580). [4450190] https://doi.org/10.1109/EDSSC.2007.4450190
Lin, Jeng Nan ; Chan, Kuo Chih ; Chen, Chin Yu ; Chiang, Meng-Hsueh. / Discrete impurity dopant fluctuation in multi-fin FinFFTs : 3D simulation-based study. IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007. 2007. pp. 577-580
@inproceedings{111b46f6a57f4871a9e633d6d99bcb98,
title = "Discrete impurity dopant fluctuation in multi-fin FinFFTs: 3D simulation-based study",
abstract = "This paper presents the assessment of the random dopant fluctuation effects in FinFET technologies with multi-fin configurations. The impact of the discrete dopant effects on advanced device structures having nearly {"}undoped{"} channels is investigated via physical analyses and numerical simulations. Our results suggest that both donor and acceptor atoms in the channel can cause a significant impact on device characteristics. Similar discrete dopant effects are observed in the double-gate, FinFET, and triple-gate devices. For applications using multi fins, the discrete dopant effects are shown to be less of concern. Physical insight into FinFET device scaling is discussed as well.",
author = "Lin, {Jeng Nan} and Chan, {Kuo Chih} and Chen, {Chin Yu} and Meng-Hsueh Chiang",
year = "2007",
doi = "10.1109/EDSSC.2007.4450190",
language = "English",
isbn = "1424406374",
pages = "577--580",
booktitle = "IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007",

}

Lin, JN, Chan, KC, Chen, CY & Chiang, M-H 2007, Discrete impurity dopant fluctuation in multi-fin FinFFTs: 3D simulation-based study. in IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007., 4450190, pp. 577-580, IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007, Tainan, Taiwan, 07-12-20. https://doi.org/10.1109/EDSSC.2007.4450190

Discrete impurity dopant fluctuation in multi-fin FinFFTs : 3D simulation-based study. / Lin, Jeng Nan; Chan, Kuo Chih; Chen, Chin Yu; Chiang, Meng-Hsueh.

IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007. 2007. p. 577-580 4450190.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

TY - GEN

T1 - Discrete impurity dopant fluctuation in multi-fin FinFFTs

T2 - 3D simulation-based study

AU - Lin, Jeng Nan

AU - Chan, Kuo Chih

AU - Chen, Chin Yu

AU - Chiang, Meng-Hsueh

PY - 2007

Y1 - 2007

N2 - This paper presents the assessment of the random dopant fluctuation effects in FinFET technologies with multi-fin configurations. The impact of the discrete dopant effects on advanced device structures having nearly "undoped" channels is investigated via physical analyses and numerical simulations. Our results suggest that both donor and acceptor atoms in the channel can cause a significant impact on device characteristics. Similar discrete dopant effects are observed in the double-gate, FinFET, and triple-gate devices. For applications using multi fins, the discrete dopant effects are shown to be less of concern. Physical insight into FinFET device scaling is discussed as well.

AB - This paper presents the assessment of the random dopant fluctuation effects in FinFET technologies with multi-fin configurations. The impact of the discrete dopant effects on advanced device structures having nearly "undoped" channels is investigated via physical analyses and numerical simulations. Our results suggest that both donor and acceptor atoms in the channel can cause a significant impact on device characteristics. Similar discrete dopant effects are observed in the double-gate, FinFET, and triple-gate devices. For applications using multi fins, the discrete dopant effects are shown to be less of concern. Physical insight into FinFET device scaling is discussed as well.

UR - http://www.scopus.com/inward/record.url?scp=43049164004&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=43049164004&partnerID=8YFLogxK

U2 - 10.1109/EDSSC.2007.4450190

DO - 10.1109/EDSSC.2007.4450190

M3 - Conference contribution

SN - 1424406374

SN - 9781424406371

SP - 577

EP - 580

BT - IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007

ER -

Lin JN, Chan KC, Chen CY, Chiang M-H. Discrete impurity dopant fluctuation in multi-fin FinFFTs: 3D simulation-based study. In IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007. 2007. p. 577-580. 4450190 https://doi.org/10.1109/EDSSC.2007.4450190