Abstract
This paper presents the assessment of the random dopant fluctuation effects in FinFET technologies with multi-fin configurations. The impact of the discrete dopant effects on advanced device structures having nearly "undoped" channels is investigated via physical analyses and numerical simulations. Our results suggest that both donor and acceptor atoms in the channel can cause a significant impact on device characteristics. Similar discrete dopant effects are observed in the double-gate, FinFET, and triple-gate devices. For applications using multi fins, the discrete dopant effects are shown to be less of concern. Physical insight into FinFET device scaling is discussed as well.
| Original language | English |
|---|---|
| Title of host publication | IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007 |
| Pages | 577-580 |
| Number of pages | 4 |
| DOIs | |
| Publication status | Published - 2007 |
| Event | IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007 - Tainan, Taiwan Duration: 2007 Dec 20 → 2007 Dec 22 |
Other
| Other | IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007 |
|---|---|
| Country | Taiwan |
| City | Tainan |
| Period | 07-12-20 → 07-12-22 |
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All Science Journal Classification (ASJC) codes
- Electrical and Electronic Engineering
- Electronic, Optical and Magnetic Materials
Cite this
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Discrete impurity dopant fluctuation in multi-fin FinFFTs : 3D simulation-based study. / Lin, Jeng Nan; Chan, Kuo Chih; Chen, Chin Yu; Chiang, Meng-Hsueh.
IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007. 2007. p. 577-580 4450190.Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
TY - GEN
T1 - Discrete impurity dopant fluctuation in multi-fin FinFFTs
T2 - 3D simulation-based study
AU - Lin, Jeng Nan
AU - Chan, Kuo Chih
AU - Chen, Chin Yu
AU - Chiang, Meng-Hsueh
PY - 2007
Y1 - 2007
N2 - This paper presents the assessment of the random dopant fluctuation effects in FinFET technologies with multi-fin configurations. The impact of the discrete dopant effects on advanced device structures having nearly "undoped" channels is investigated via physical analyses and numerical simulations. Our results suggest that both donor and acceptor atoms in the channel can cause a significant impact on device characteristics. Similar discrete dopant effects are observed in the double-gate, FinFET, and triple-gate devices. For applications using multi fins, the discrete dopant effects are shown to be less of concern. Physical insight into FinFET device scaling is discussed as well.
AB - This paper presents the assessment of the random dopant fluctuation effects in FinFET technologies with multi-fin configurations. The impact of the discrete dopant effects on advanced device structures having nearly "undoped" channels is investigated via physical analyses and numerical simulations. Our results suggest that both donor and acceptor atoms in the channel can cause a significant impact on device characteristics. Similar discrete dopant effects are observed in the double-gate, FinFET, and triple-gate devices. For applications using multi fins, the discrete dopant effects are shown to be less of concern. Physical insight into FinFET device scaling is discussed as well.
UR - http://www.scopus.com/inward/record.url?scp=43049164004&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=43049164004&partnerID=8YFLogxK
U2 - 10.1109/EDSSC.2007.4450190
DO - 10.1109/EDSSC.2007.4450190
M3 - Conference contribution
SN - 1424406374
SN - 9781424406371
SP - 577
EP - 580
BT - IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007
ER -