TY - GEN
T1 - Discrete impurity dopant fluctuation in multi-fin FinFFTs
T2 - IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007
AU - Lin, Jeng Nan
AU - Chan, Kuo Chih
AU - Chen, Chin Yu
AU - Chiang, Meng-Hsueh
PY - 2007/12/1
Y1 - 2007/12/1
N2 - This paper presents the assessment of the random dopant fluctuation effects in FinFET technologies with multi-fin configurations. The impact of the discrete dopant effects on advanced device structures having nearly "undoped" channels is investigated via physical analyses and numerical simulations. Our results suggest that both donor and acceptor atoms in the channel can cause a significant impact on device characteristics. Similar discrete dopant effects are observed in the double-gate, FinFET, and triple-gate devices. For applications using multi fins, the discrete dopant effects are shown to be less of concern. Physical insight into FinFET device scaling is discussed as well.
AB - This paper presents the assessment of the random dopant fluctuation effects in FinFET technologies with multi-fin configurations. The impact of the discrete dopant effects on advanced device structures having nearly "undoped" channels is investigated via physical analyses and numerical simulations. Our results suggest that both donor and acceptor atoms in the channel can cause a significant impact on device characteristics. Similar discrete dopant effects are observed in the double-gate, FinFET, and triple-gate devices. For applications using multi fins, the discrete dopant effects are shown to be less of concern. Physical insight into FinFET device scaling is discussed as well.
UR - http://www.scopus.com/inward/record.url?scp=43049164004&partnerID=8YFLogxK
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U2 - 10.1109/EDSSC.2007.4450190
DO - 10.1109/EDSSC.2007.4450190
M3 - Conference contribution
AN - SCOPUS:43049164004
SN - 1424406374
SN - 9781424406371
T3 - IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007
SP - 577
EP - 580
BT - IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007
Y2 - 20 December 2007 through 22 December 2007
ER -