Dislocation reduction through nucleation and growth selectivity of metal-organic chemical vapor deposition GaN

Wei Zhang, Peichi Liu, Biyun Jackson, Tianshu Sun, Shyh Jer Huang, Hsiao Chiu Hsu, Yan Kuin Su, Shoou-Jinn Chang, Lei Li, Ding Li, Lei Wang, Xiaodong Hu, Y. H. Xie

Research output: Contribution to journalArticle

9 Citations (Scopus)

Abstract

A novel serpentine channel structure is used to mask the sapphire substrate for the epitaxial growth of dislocation-free GaN. Compared to the existing epitaxial lateral overgrowth methods, the main advantages of this novel technique are: (a) one-step epitaxial growth; (b) up to 4 times wider defect-free regions; and (c) the as-grown GaN film can be transferred easily to any type of substrate. TEM, etch pits and cathodoluminescence experiments are conducted to characterize the quality of as-grown GaN. The results show that the average etch-pit density in the yet-to-be-optimized GaN epi-layers is about 4 × 105 cm-2. The underlying physics of selective nucleation and growth is investigated using the finite element method (COMSOL). It is concluded that the proximity effect dominates the selective growth of GaN on the serpentine channel structure masked sapphire. This novel technique is a promising candidate for the growth of high quality III-nitride and the subsequent high-performance device fabrication including high brightness LED, laser diodes, and high-power, high-efficiency transistors.

Original languageEnglish
Article number144908
JournalJournal of Applied Physics
Volume113
Issue number14
DOIs
Publication statusPublished - 2013 Apr 14

Fingerprint

metalorganic chemical vapor deposition
selectivity
nucleation
sapphire
cathodoluminescence
nitrides
finite element method
brightness
transistors
light emitting diodes
masks
semiconductor lasers
transmission electron microscopy
fabrication
physics
defects

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

Cite this

Zhang, W., Liu, P., Jackson, B., Sun, T., Huang, S. J., Hsu, H. C., ... Xie, Y. H. (2013). Dislocation reduction through nucleation and growth selectivity of metal-organic chemical vapor deposition GaN. Journal of Applied Physics, 113(14), [144908]. https://doi.org/10.1063/1.4799600
Zhang, Wei ; Liu, Peichi ; Jackson, Biyun ; Sun, Tianshu ; Huang, Shyh Jer ; Hsu, Hsiao Chiu ; Su, Yan Kuin ; Chang, Shoou-Jinn ; Li, Lei ; Li, Ding ; Wang, Lei ; Hu, Xiaodong ; Xie, Y. H. / Dislocation reduction through nucleation and growth selectivity of metal-organic chemical vapor deposition GaN. In: Journal of Applied Physics. 2013 ; Vol. 113, No. 14.
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abstract = "A novel serpentine channel structure is used to mask the sapphire substrate for the epitaxial growth of dislocation-free GaN. Compared to the existing epitaxial lateral overgrowth methods, the main advantages of this novel technique are: (a) one-step epitaxial growth; (b) up to 4 times wider defect-free regions; and (c) the as-grown GaN film can be transferred easily to any type of substrate. TEM, etch pits and cathodoluminescence experiments are conducted to characterize the quality of as-grown GaN. The results show that the average etch-pit density in the yet-to-be-optimized GaN epi-layers is about 4 × 105 cm-2. The underlying physics of selective nucleation and growth is investigated using the finite element method (COMSOL). It is concluded that the proximity effect dominates the selective growth of GaN on the serpentine channel structure masked sapphire. This novel technique is a promising candidate for the growth of high quality III-nitride and the subsequent high-performance device fabrication including high brightness LED, laser diodes, and high-power, high-efficiency transistors.",
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Zhang, W, Liu, P, Jackson, B, Sun, T, Huang, SJ, Hsu, HC, Su, YK, Chang, S-J, Li, L, Li, D, Wang, L, Hu, X & Xie, YH 2013, 'Dislocation reduction through nucleation and growth selectivity of metal-organic chemical vapor deposition GaN', Journal of Applied Physics, vol. 113, no. 14, 144908. https://doi.org/10.1063/1.4799600

Dislocation reduction through nucleation and growth selectivity of metal-organic chemical vapor deposition GaN. / Zhang, Wei; Liu, Peichi; Jackson, Biyun; Sun, Tianshu; Huang, Shyh Jer; Hsu, Hsiao Chiu; Su, Yan Kuin; Chang, Shoou-Jinn; Li, Lei; Li, Ding; Wang, Lei; Hu, Xiaodong; Xie, Y. H.

In: Journal of Applied Physics, Vol. 113, No. 14, 144908, 14.04.2013.

Research output: Contribution to journalArticle

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T1 - Dislocation reduction through nucleation and growth selectivity of metal-organic chemical vapor deposition GaN

AU - Zhang, Wei

AU - Liu, Peichi

AU - Jackson, Biyun

AU - Sun, Tianshu

AU - Huang, Shyh Jer

AU - Hsu, Hsiao Chiu

AU - Su, Yan Kuin

AU - Chang, Shoou-Jinn

AU - Li, Lei

AU - Li, Ding

AU - Wang, Lei

AU - Hu, Xiaodong

AU - Xie, Y. H.

PY - 2013/4/14

Y1 - 2013/4/14

N2 - A novel serpentine channel structure is used to mask the sapphire substrate for the epitaxial growth of dislocation-free GaN. Compared to the existing epitaxial lateral overgrowth methods, the main advantages of this novel technique are: (a) one-step epitaxial growth; (b) up to 4 times wider defect-free regions; and (c) the as-grown GaN film can be transferred easily to any type of substrate. TEM, etch pits and cathodoluminescence experiments are conducted to characterize the quality of as-grown GaN. The results show that the average etch-pit density in the yet-to-be-optimized GaN epi-layers is about 4 × 105 cm-2. The underlying physics of selective nucleation and growth is investigated using the finite element method (COMSOL). It is concluded that the proximity effect dominates the selective growth of GaN on the serpentine channel structure masked sapphire. This novel technique is a promising candidate for the growth of high quality III-nitride and the subsequent high-performance device fabrication including high brightness LED, laser diodes, and high-power, high-efficiency transistors.

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