Dislocation reduction through nucleation and growth selectivity of metal-organic chemical vapor deposition GaN

Wei Zhang, Peichi Liu, Biyun Jackson, Tianshu Sun, Shyh Jer Huang, Hsiao Chiu Hsu, Yan Kuin Su, Shoou Jinn Chang, Lei Li, Ding Li, Lei Wang, Xiaodong Hu, Y. H. Xie

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9 Citations (Scopus)

Abstract

A novel serpentine channel structure is used to mask the sapphire substrate for the epitaxial growth of dislocation-free GaN. Compared to the existing epitaxial lateral overgrowth methods, the main advantages of this novel technique are: (a) one-step epitaxial growth; (b) up to 4 times wider defect-free regions; and (c) the as-grown GaN film can be transferred easily to any type of substrate. TEM, etch pits and cathodoluminescence experiments are conducted to characterize the quality of as-grown GaN. The results show that the average etch-pit density in the yet-to-be-optimized GaN epi-layers is about 4 × 105 cm-2. The underlying physics of selective nucleation and growth is investigated using the finite element method (COMSOL). It is concluded that the proximity effect dominates the selective growth of GaN on the serpentine channel structure masked sapphire. This novel technique is a promising candidate for the growth of high quality III-nitride and the subsequent high-performance device fabrication including high brightness LED, laser diodes, and high-power, high-efficiency transistors.

Original languageEnglish
Article number144908
JournalJournal of Applied Physics
Volume113
Issue number14
DOIs
Publication statusPublished - 2013 Apr 14

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

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