Diverse resistive switching behaviors of AlN thin films with different orientations

Chun Cheng Lin, Huei Yu Liou, Sheng Yuan Chu, Chih Yu Huang, Cheng Shong Hong

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

Aluminum nitride (AlN) thin films with different orientations (i.e., amorphous, (100)- and (002)-oriented) are deposited on Pt/Ti/SiO2/Si substrates via the radio-frequency (RF) sputtering method. Among the three films, the amorphous AlN film is found to provide both the lowest leakage current (2.6 × 10-11 A) and the largest memory window size (3.1 × 106). Moreover, the observation results suggest that the thermal activation energy has a greater effect on the conduction behavior of the Ag/AlN/Pt structures than the microstructure, surface morphology, or chemical bonds.

Original languageEnglish
Pages (from-to)6230-6235
Number of pages6
JournalCrystEngComm
Volume20
Issue number40
DOIs
Publication statusPublished - 2018 Jan 1

All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Materials Science(all)
  • Condensed Matter Physics

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