@article{a1fd5d1d0488485eb9cca2d77ef02f33,
title = "Diverse resistive switching behaviors of AlN thin films with different orientations",
abstract = "Aluminum nitride (AlN) thin films with different orientations (i.e., amorphous, (100)- and (002)-oriented) are deposited on Pt/Ti/SiO2/Si substrates via the radio-frequency (RF) sputtering method. Among the three films, the amorphous AlN film is found to provide both the lowest leakage current (2.6 × 10-11 A) and the largest memory window size (3.1 × 106). Moreover, the observation results suggest that the thermal activation energy has a greater effect on the conduction behavior of the Ag/AlN/Pt structures than the microstructure, surface morphology, or chemical bonds.",
author = "Lin, {Chun Cheng} and Liou, {Huei Yu} and Chu, {Sheng Yuan} and Huang, {Chih Yu} and Hong, {Cheng Shong}",
note = "Funding Information: This work was supported by the Ministry of Science and Technology, Taiwan, under Grant No. MOST 106-2221-E-006-226, 106-2622-E-006-019-CC3, 106-2218-E-006-023 and 107-2218-E-006-035, and by the National Applied Research Laboratories, Taiwan, under Grant No. NARL-IOT-106-019. The authors would also like to thank Mr. Patrick Sinclair Wyton of Aca- demic English Services, Taiwan, for his assistance in editing and proofreading this paper. Funding Information: This work was supported by the Ministry of Science and Technology, Taiwan, under Grant No. MOST 106-2221-E-006-226, 106-2622-E-006-019-CC3, 106-2218-E-006-023 and 107-2218-E-006-035, and by the National Applied Research Laboratories, Taiwan, under Grant No. NARL-IOT-106-019. The authors would also like to thank Mr. Patrick Sinclair Wyton of Academic English Services, Taiwan, for his assistance in editing and proofreading this paper.",
year = "2018",
doi = "10.1039/c8ce00966j",
language = "English",
volume = "20",
pages = "6230--6235",
journal = "CrystEngComm",
issn = "1466-8033",
publisher = "Royal Society of Chemistry",
number = "40",
}