DLTS MEASUREMENT OF BULK DENSITY OF GAP STATES IN PLASMA ENHANCED CVD AMORPHOUS SILICON.

C. Y. Chang, Y. K. Fang, Wei-Chou Hsu, W. L. Lin

Research output: Contribution to conferencePaper

2 Citations (Scopus)
Original languageEnglish
Pages357-367
Number of pages11
Publication statusPublished - 1981 Dec 1

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Deep level transient spectroscopy
Glow discharges
Plasma enhanced chemical vapor deposition
Amorphous silicon
Hydrogenation
Chemical vapor deposition
Plasmas
Silicon

All Science Journal Classification (ASJC) codes

  • Engineering(all)

Cite this

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title = "DLTS MEASUREMENT OF BULK DENSITY OF GAP STATES IN PLASMA ENHANCED CVD AMORPHOUS SILICON.",
author = "Chang, {C. Y.} and Fang, {Y. K.} and Wei-Chou Hsu and Lin, {W. L.}",
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pages = "357--367",

}

DLTS MEASUREMENT OF BULK DENSITY OF GAP STATES IN PLASMA ENHANCED CVD AMORPHOUS SILICON. / Chang, C. Y.; Fang, Y. K.; Hsu, Wei-Chou; Lin, W. L.

1981. 357-367.

Research output: Contribution to conferencePaper

TY - CONF

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