Domain growth dynamics in single-domain-like BiFeO3 thin films

Y. C. Chen; Q. R. Lin; Y. H. Chu

doi:10.1063/1.3109779

Domain growth dynamics in single-domain-like BiFeO₃ thin films

Y. C. Chen, Q. R. Lin, Y. H. Chu

Department of Physics

Research output: Contribution to journal › Article › peer-review

31 Citations (Scopus)

Abstract

We present a quantitative study of 180° domain wall motion in epitaxial BiFeO3 (111) films, which can be treated as a nearly ideal single-domain environment. The domains were dynamically written by applying voltage pulses and examined by the piezoresponse force microscope technique. A transition of domain growth behaviors from the activated type to the nonactivated type was observed when increasing the pulse voltages. The obtained activation field was close to the ideally thermodynamic switching field of BiFeO3. The asymmetry of activated fields showed the preference of the downward polarization in the BiFeO3 / SrRuO3 films.

Original language	English
Article number	122908
Journal	Applied Physics Letters
Volume	94
Issue number	12
DOIs	https://doi.org/10.1063/1.3109779
Publication status	Published - 2009

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.3109779

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title = "Domain growth dynamics in single-domain-like BiFeO3 thin films",

abstract = "We present a quantitative study of 180° domain wall motion in epitaxial BiFeO3 (111) films, which can be treated as a nearly ideal single-domain environment. The domains were dynamically written by applying voltage pulses and examined by the piezoresponse force microscope technique. A transition of domain growth behaviors from the activated type to the nonactivated type was observed when increasing the pulse voltages. The obtained activation field was close to the ideally thermodynamic switching field of BiFeO3. The asymmetry of activated fields showed the preference of the downward polarization in the BiFeO3 / SrRuO3 films.",

author = "Chen, {Y. C.} and Lin, {Q. R.} and Chu, {Y. H.}",

note = "Funding Information: Financial support of the National Science Council through Project Nos. NSC 96-2112-M-006-018-MY3 and NSC 97-3114-M-009-001 are gratefully acknowledged by the authors.",

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volume = "94",

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AU - Chen, Y. C.

AU - Lin, Q. R.

AU - Chu, Y. H.

N1 - Funding Information: Financial support of the National Science Council through Project Nos. NSC 96-2112-M-006-018-MY3 and NSC 97-3114-M-009-001 are gratefully acknowledged by the authors.

PY - 2009

Y1 - 2009

N2 - We present a quantitative study of 180° domain wall motion in epitaxial BiFeO3 (111) films, which can be treated as a nearly ideal single-domain environment. The domains were dynamically written by applying voltage pulses and examined by the piezoresponse force microscope technique. A transition of domain growth behaviors from the activated type to the nonactivated type was observed when increasing the pulse voltages. The obtained activation field was close to the ideally thermodynamic switching field of BiFeO3. The asymmetry of activated fields showed the preference of the downward polarization in the BiFeO3 / SrRuO3 films.

AB - We present a quantitative study of 180° domain wall motion in epitaxial BiFeO3 (111) films, which can be treated as a nearly ideal single-domain environment. The domains were dynamically written by applying voltage pulses and examined by the piezoresponse force microscope technique. A transition of domain growth behaviors from the activated type to the nonactivated type was observed when increasing the pulse voltages. The obtained activation field was close to the ideally thermodynamic switching field of BiFeO3. The asymmetry of activated fields showed the preference of the downward polarization in the BiFeO3 / SrRuO3 films.

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Domain growth dynamics in single-domain-like BiFeO₃ thin films

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