Domain growth dynamics in single-domain-like BiFeO3 thin films

Y. C. Chen, Q. R. Lin, Y. H. Chu

Research output: Contribution to journalArticle

26 Citations (Scopus)

Abstract

We present a quantitative study of 180° domain wall motion in epitaxial BiFeO3 (111) films, which can be treated as a nearly ideal single-domain environment. The domains were dynamically written by applying voltage pulses and examined by the piezoresponse force microscope technique. A transition of domain growth behaviors from the activated type to the nonactivated type was observed when increasing the pulse voltages. The obtained activation field was close to the ideally thermodynamic switching field of BiFeO3. The asymmetry of activated fields showed the preference of the downward polarization in the BiFeO3 / SrRuO3 films.

Original languageEnglish
Article number122908
JournalApplied Physics Letters
Volume94
Issue number12
DOIs
Publication statusPublished - 2009 Apr 7

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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