Domain relaxation dynamics in epitaxial BiFeO 3 films: Role of surface charges

Yi-Chun Chen, Cheng Hung Ko, Yen Chin Huang, Jan-Chi Yang, Ying Hao Chu

Research output: Contribution to journalArticle

17 Citations (Scopus)

Abstract

The thermodynamic parameters of domain relaxation process in the absence of external electric fields are related to the intrinsic electrostatic and stress/strain conditions inside the materials, such as the states at surface, states at interface with the electrode, and the atomic defects in the bulk. In order to perform systematical studies of these intrinsic effects, we investigated domain relaxation in a monodomain environment, which was obtained in strained epitaxial BiFeO 3 (BFO)(111) films. Without as-grown domain walls and grain boundaries, the epitaxial BFO(111) film provided an ideal system for the dynamic observation of 180-degree domain wall motion. Nano-domains were initially created by writing voltage pulses under the tip of a scanning force microscope and then relaxed through time. The downward polarized domains exhibited much better retention behaviors than the upward domains. A two-step backswitching process was observed, and the behaviors varied with the initial domain sizes. Surface potential measurement showed the dissipation of surface screen charges with time, which was strongly coupled with the 1st step relaxation. The asymmetry behaviors for upward and downward backswitchings, and the two-stage relaxation processes can be explained by the mobile vacancies and the redistribution of surface charges. This study provides the basic understanding of the role of surface charges during the ferroelectric domain relaxation.

Original languageEnglish
Article number052017
JournalJournal of Applied Physics
Volume112
Issue number5
DOIs
Publication statusPublished - 2012 Sep 1

Fingerprint

domain wall
dissipation
grain boundaries
microscopes
asymmetry
electrostatics
thermodynamics
scanning
electrodes
electric fields
defects
electric potential
pulses

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

Cite this

@article{f697dde3d1ca42faa497c4a3b238b13e,
title = "Domain relaxation dynamics in epitaxial BiFeO 3 films: Role of surface charges",
abstract = "The thermodynamic parameters of domain relaxation process in the absence of external electric fields are related to the intrinsic electrostatic and stress/strain conditions inside the materials, such as the states at surface, states at interface with the electrode, and the atomic defects in the bulk. In order to perform systematical studies of these intrinsic effects, we investigated domain relaxation in a monodomain environment, which was obtained in strained epitaxial BiFeO 3 (BFO)(111) films. Without as-grown domain walls and grain boundaries, the epitaxial BFO(111) film provided an ideal system for the dynamic observation of 180-degree domain wall motion. Nano-domains were initially created by writing voltage pulses under the tip of a scanning force microscope and then relaxed through time. The downward polarized domains exhibited much better retention behaviors than the upward domains. A two-step backswitching process was observed, and the behaviors varied with the initial domain sizes. Surface potential measurement showed the dissipation of surface screen charges with time, which was strongly coupled with the 1st step relaxation. The asymmetry behaviors for upward and downward backswitchings, and the two-stage relaxation processes can be explained by the mobile vacancies and the redistribution of surface charges. This study provides the basic understanding of the role of surface charges during the ferroelectric domain relaxation.",
author = "Yi-Chun Chen and Ko, {Cheng Hung} and Huang, {Yen Chin} and Jan-Chi Yang and Chu, {Ying Hao}",
year = "2012",
month = "9",
day = "1",
doi = "10.1063/1.4746077",
language = "English",
volume = "112",
journal = "Journal of Applied Physics",
issn = "0021-8979",
publisher = "American Institute of Physics Publising LLC",
number = "5",

}

Domain relaxation dynamics in epitaxial BiFeO 3 films : Role of surface charges. / Chen, Yi-Chun; Ko, Cheng Hung; Huang, Yen Chin; Yang, Jan-Chi; Chu, Ying Hao.

In: Journal of Applied Physics, Vol. 112, No. 5, 052017, 01.09.2012.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Domain relaxation dynamics in epitaxial BiFeO 3 films

T2 - Role of surface charges

AU - Chen, Yi-Chun

AU - Ko, Cheng Hung

AU - Huang, Yen Chin

AU - Yang, Jan-Chi

AU - Chu, Ying Hao

PY - 2012/9/1

Y1 - 2012/9/1

N2 - The thermodynamic parameters of domain relaxation process in the absence of external electric fields are related to the intrinsic electrostatic and stress/strain conditions inside the materials, such as the states at surface, states at interface with the electrode, and the atomic defects in the bulk. In order to perform systematical studies of these intrinsic effects, we investigated domain relaxation in a monodomain environment, which was obtained in strained epitaxial BiFeO 3 (BFO)(111) films. Without as-grown domain walls and grain boundaries, the epitaxial BFO(111) film provided an ideal system for the dynamic observation of 180-degree domain wall motion. Nano-domains were initially created by writing voltage pulses under the tip of a scanning force microscope and then relaxed through time. The downward polarized domains exhibited much better retention behaviors than the upward domains. A two-step backswitching process was observed, and the behaviors varied with the initial domain sizes. Surface potential measurement showed the dissipation of surface screen charges with time, which was strongly coupled with the 1st step relaxation. The asymmetry behaviors for upward and downward backswitchings, and the two-stage relaxation processes can be explained by the mobile vacancies and the redistribution of surface charges. This study provides the basic understanding of the role of surface charges during the ferroelectric domain relaxation.

AB - The thermodynamic parameters of domain relaxation process in the absence of external electric fields are related to the intrinsic electrostatic and stress/strain conditions inside the materials, such as the states at surface, states at interface with the electrode, and the atomic defects in the bulk. In order to perform systematical studies of these intrinsic effects, we investigated domain relaxation in a monodomain environment, which was obtained in strained epitaxial BiFeO 3 (BFO)(111) films. Without as-grown domain walls and grain boundaries, the epitaxial BFO(111) film provided an ideal system for the dynamic observation of 180-degree domain wall motion. Nano-domains were initially created by writing voltage pulses under the tip of a scanning force microscope and then relaxed through time. The downward polarized domains exhibited much better retention behaviors than the upward domains. A two-step backswitching process was observed, and the behaviors varied with the initial domain sizes. Surface potential measurement showed the dissipation of surface screen charges with time, which was strongly coupled with the 1st step relaxation. The asymmetry behaviors for upward and downward backswitchings, and the two-stage relaxation processes can be explained by the mobile vacancies and the redistribution of surface charges. This study provides the basic understanding of the role of surface charges during the ferroelectric domain relaxation.

UR - http://www.scopus.com/inward/record.url?scp=84866423004&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84866423004&partnerID=8YFLogxK

U2 - 10.1063/1.4746077

DO - 10.1063/1.4746077

M3 - Article

AN - SCOPUS:84866423004

VL - 112

JO - Journal of Applied Physics

JF - Journal of Applied Physics

SN - 0021-8979

IS - 5

M1 - 052017

ER -