Domain wall conductivity in La-doped BiFeO 3

J. Seidel, P. Maksymovych, Y. Batra, A. Katan, S. Y. Yang, Q. He, A. P. Baddorf, S. V. Kalinin, C. H. Yang, Jan-Chi Yang, Y. H. Chu, E. K.H. Salje, H. Wormeester, M. Salmeron, R. Ramesh

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The transport physics of domain wall conductivity in La-doped bismuth ferrite (BiFeO 3 ) has been probed using variable temperature conducting atomic force microscopy and piezoresponse force microscopy in samples with arrays of domain walls in the as-grown state. Nanoscale current measurements are investigated as a function of bias and temperature and are shown to be consistent with distinct electronic properties at the domain walls leading to changes in the observed local conductivity. Our observation is well described within a band picture of the observed electronic conduction. Finally, we demonstrate an additional degree of control of the wall conductivity through chemical doping with oxygen vacancies, thus influencing the local conductive state.

Original languageEnglish
Article number197603
JournalPhysical review letters
Issue number19
Publication statusPublished - 2010 Nov 5

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

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    Seidel, J., Maksymovych, P., Batra, Y., Katan, A., Yang, S. Y., He, Q., Baddorf, A. P., Kalinin, S. V., Yang, C. H., Yang, J-C., Chu, Y. H., Salje, E. K. H., Wormeester, H., Salmeron, M., & Ramesh, R. (2010). Domain wall conductivity in La-doped BiFeO 3 Physical review letters, 105(19), [197603].