Dominant photogenerated valley current in a double-barrier resonant-tunneling diode

H. S. Li; L. P. Chen; Y. W. Chen; K. L. Wang; D. S. Pan; J. M. Liu

doi:10.1063/1.112489

Dominant photogenerated valley current in a double-barrier resonant-tunneling diode

H. S. Li, L. P. Chen, Y. W. Chen, K. L. Wang, D. S. Pan, J. M. Liu

College of Electrical Engineering and Computer Science

Research output: Contribution to journal › Article › peer-review

Abstract

Dominant photogenerated valley current has been observed in an optically-excited InGaAs/AlAs double-barrier resonant-tunneling diode. The photogenerated valley current in the resonant-tunneling diode varies with the optical power level. Under intense illumination, the photogenerated valley current increases to such a high level that it becomes dominant over the peak current. As a consequence, the negative differential resistance of the device is removed. The observed photogenerated valley current is described by photogenerating electron-hole pairs in the depletion region adjacent to the double-barrier structure. Transient behavior of the photogenerated carriers is also studied. The observed dominant photogenerated valley current may have useful applications.

Original language	English
Pages (from-to)	2999-3001
Number of pages	3
Journal	Applied Physics Letters
Volume	65
Issue number	23
DOIs	https://doi.org/10.1063/1.112489
Publication status	Published - 1994

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.112489

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@article{3699e6c38427431199e7dbf88a048151,

title = "Dominant photogenerated valley current in a double-barrier resonant-tunneling diode",

abstract = "Dominant photogenerated valley current has been observed in an optically-excited InGaAs/AlAs double-barrier resonant-tunneling diode. The photogenerated valley current in the resonant-tunneling diode varies with the optical power level. Under intense illumination, the photogenerated valley current increases to such a high level that it becomes dominant over the peak current. As a consequence, the negative differential resistance of the device is removed. The observed photogenerated valley current is described by photogenerating electron-hole pairs in the depletion region adjacent to the double-barrier structure. Transient behavior of the photogenerated carriers is also studied. The observed dominant photogenerated valley current may have useful applications.",

author = "Li, {H. S.} and Chen, {L. P.} and Chen, {Y. W.} and Wang, {K. L.} and Pan, {D. S.} and Liu, {J. M.}",

year = "1994",

doi = "10.1063/1.112489",

language = "English",

volume = "65",

pages = "2999--3001",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "23",

}

TY - JOUR

T1 - Dominant photogenerated valley current in a double-barrier resonant-tunneling diode

AU - Li, H. S.

AU - Chen, L. P.

AU - Chen, Y. W.

AU - Wang, K. L.

AU - Pan, D. S.

AU - Liu, J. M.

PY - 1994

Y1 - 1994

N2 - Dominant photogenerated valley current has been observed in an optically-excited InGaAs/AlAs double-barrier resonant-tunneling diode. The photogenerated valley current in the resonant-tunneling diode varies with the optical power level. Under intense illumination, the photogenerated valley current increases to such a high level that it becomes dominant over the peak current. As a consequence, the negative differential resistance of the device is removed. The observed photogenerated valley current is described by photogenerating electron-hole pairs in the depletion region adjacent to the double-barrier structure. Transient behavior of the photogenerated carriers is also studied. The observed dominant photogenerated valley current may have useful applications.

AB - Dominant photogenerated valley current has been observed in an optically-excited InGaAs/AlAs double-barrier resonant-tunneling diode. The photogenerated valley current in the resonant-tunneling diode varies with the optical power level. Under intense illumination, the photogenerated valley current increases to such a high level that it becomes dominant over the peak current. As a consequence, the negative differential resistance of the device is removed. The observed photogenerated valley current is described by photogenerating electron-hole pairs in the depletion region adjacent to the double-barrier structure. Transient behavior of the photogenerated carriers is also studied. The observed dominant photogenerated valley current may have useful applications.

UR - http://www.scopus.com/inward/record.url?scp=0000683198&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0000683198&partnerID=8YFLogxK

U2 - 10.1063/1.112489

DO - 10.1063/1.112489

M3 - Article

AN - SCOPUS:0000683198

VL - 65

SP - 2999

EP - 3001

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 23

ER -