Abstract
Dominant photogenerated valley current has been observed in an optically-excited InGaAs/AlAs double-barrier resonant-tunneling diode. The photogenerated valley current in the resonant-tunneling diode varies with the optical power level. Under intense illumination, the photogenerated valley current increases to such a high level that it becomes dominant over the peak current. As a consequence, the negative differential resistance of the device is removed. The observed photogenerated valley current is described by photogenerating electron-hole pairs in the depletion region adjacent to the double-barrier structure. Transient behavior of the photogenerated carriers is also studied. The observed dominant photogenerated valley current may have useful applications.
| Original language | English |
|---|---|
| Pages (from-to) | 2999-3001 |
| Number of pages | 3 |
| Journal | Applied Physics Letters |
| Volume | 65 |
| Issue number | 23 |
| DOIs | |
| Publication status | Published - 1994 |
All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)