Dopant profiling of metal-oxide semiconductor (MOS) structures with scanning electron microscopy

W. C. Hsiao, Chuan-Pu Liu, C. L. Yang, L. C. Sun, Thomas Hung

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

This article describes the results of a detailed study on semiconductor dopant profiling with the scanning electron microscope using secondary electrons. The technique has been widely used to study the contrast of doped silicon as well as a metal-oxide semiconductor structure. The optimum experimental conditions for observing the contrast of the p/n junction areas were established by investigating the effect of microscope and material parameters including accelerating voltage [1], working distance, spot size, tilt angle [2,3] and chemical treatment [4]. The preparation of the cross-sectional sample for the imaging of the semiconductor doping profile in MOS structures is successfully demonstrated for the first time by direct-polishing. The contrast between the brighter p-type areas and the darker n-type areas is maximized at an accelerating voltage of 1 kV [5], and when a through-the-lens detector is used. We have studied the variation of doping contrast with specimen tilt and various chemical pre-treatments.

Original languageEnglish
Title of host publicationInterfaces in Electronic Materials - Proceedings of the International Symposium
Pages180-183
Number of pages4
Publication statusPublished - 2006 Jul 20
Event204th Electrochemical Society Fall Meeting - Orlando, FL, United States
Duration: 2003 Oct 122003 Oct 16

Publication series

NameProceedings - Electrochemical Society
VolumePV 2003-31

Other

Other204th Electrochemical Society Fall Meeting
CountryUnited States
CityOrlando, FL
Period03-10-1203-10-16

Fingerprint

Semiconductor doping
Doping (additives)
Scanning electron microscopy
Electric potential
Metals
Polishing
Lenses
Microscopes
Electron microscopes
Semiconductor materials
Detectors
Scanning
Imaging techniques
Silicon
Electrons
Oxide semiconductors

All Science Journal Classification (ASJC) codes

  • Engineering(all)

Cite this

Hsiao, W. C., Liu, C-P., Yang, C. L., Sun, L. C., & Hung, T. (2006). Dopant profiling of metal-oxide semiconductor (MOS) structures with scanning electron microscopy. In Interfaces in Electronic Materials - Proceedings of the International Symposium (pp. 180-183). (Proceedings - Electrochemical Society; Vol. PV 2003-31).
Hsiao, W. C. ; Liu, Chuan-Pu ; Yang, C. L. ; Sun, L. C. ; Hung, Thomas. / Dopant profiling of metal-oxide semiconductor (MOS) structures with scanning electron microscopy. Interfaces in Electronic Materials - Proceedings of the International Symposium. 2006. pp. 180-183 (Proceedings - Electrochemical Society).
@inproceedings{e7492eaf49ad4cbf9d315777641cafa7,
title = "Dopant profiling of metal-oxide semiconductor (MOS) structures with scanning electron microscopy",
abstract = "This article describes the results of a detailed study on semiconductor dopant profiling with the scanning electron microscope using secondary electrons. The technique has been widely used to study the contrast of doped silicon as well as a metal-oxide semiconductor structure. The optimum experimental conditions for observing the contrast of the p/n junction areas were established by investigating the effect of microscope and material parameters including accelerating voltage [1], working distance, spot size, tilt angle [2,3] and chemical treatment [4]. The preparation of the cross-sectional sample for the imaging of the semiconductor doping profile in MOS structures is successfully demonstrated for the first time by direct-polishing. The contrast between the brighter p-type areas and the darker n-type areas is maximized at an accelerating voltage of 1 kV [5], and when a through-the-lens detector is used. We have studied the variation of doping contrast with specimen tilt and various chemical pre-treatments.",
author = "Hsiao, {W. C.} and Chuan-Pu Liu and Yang, {C. L.} and Sun, {L. C.} and Thomas Hung",
year = "2006",
month = "7",
day = "20",
language = "English",
isbn = "156677425X",
series = "Proceedings - Electrochemical Society",
pages = "180--183",
booktitle = "Interfaces in Electronic Materials - Proceedings of the International Symposium",

}

Hsiao, WC, Liu, C-P, Yang, CL, Sun, LC & Hung, T 2006, Dopant profiling of metal-oxide semiconductor (MOS) structures with scanning electron microscopy. in Interfaces in Electronic Materials - Proceedings of the International Symposium. Proceedings - Electrochemical Society, vol. PV 2003-31, pp. 180-183, 204th Electrochemical Society Fall Meeting, Orlando, FL, United States, 03-10-12.

Dopant profiling of metal-oxide semiconductor (MOS) structures with scanning electron microscopy. / Hsiao, W. C.; Liu, Chuan-Pu; Yang, C. L.; Sun, L. C.; Hung, Thomas.

Interfaces in Electronic Materials - Proceedings of the International Symposium. 2006. p. 180-183 (Proceedings - Electrochemical Society; Vol. PV 2003-31).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

TY - GEN

T1 - Dopant profiling of metal-oxide semiconductor (MOS) structures with scanning electron microscopy

AU - Hsiao, W. C.

AU - Liu, Chuan-Pu

AU - Yang, C. L.

AU - Sun, L. C.

AU - Hung, Thomas

PY - 2006/7/20

Y1 - 2006/7/20

N2 - This article describes the results of a detailed study on semiconductor dopant profiling with the scanning electron microscope using secondary electrons. The technique has been widely used to study the contrast of doped silicon as well as a metal-oxide semiconductor structure. The optimum experimental conditions for observing the contrast of the p/n junction areas were established by investigating the effect of microscope and material parameters including accelerating voltage [1], working distance, spot size, tilt angle [2,3] and chemical treatment [4]. The preparation of the cross-sectional sample for the imaging of the semiconductor doping profile in MOS structures is successfully demonstrated for the first time by direct-polishing. The contrast between the brighter p-type areas and the darker n-type areas is maximized at an accelerating voltage of 1 kV [5], and when a through-the-lens detector is used. We have studied the variation of doping contrast with specimen tilt and various chemical pre-treatments.

AB - This article describes the results of a detailed study on semiconductor dopant profiling with the scanning electron microscope using secondary electrons. The technique has been widely used to study the contrast of doped silicon as well as a metal-oxide semiconductor structure. The optimum experimental conditions for observing the contrast of the p/n junction areas were established by investigating the effect of microscope and material parameters including accelerating voltage [1], working distance, spot size, tilt angle [2,3] and chemical treatment [4]. The preparation of the cross-sectional sample for the imaging of the semiconductor doping profile in MOS structures is successfully demonstrated for the first time by direct-polishing. The contrast between the brighter p-type areas and the darker n-type areas is maximized at an accelerating voltage of 1 kV [5], and when a through-the-lens detector is used. We have studied the variation of doping contrast with specimen tilt and various chemical pre-treatments.

UR - http://www.scopus.com/inward/record.url?scp=33745939526&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=33745939526&partnerID=8YFLogxK

M3 - Conference contribution

SN - 156677425X

SN - 9781566774253

T3 - Proceedings - Electrochemical Society

SP - 180

EP - 183

BT - Interfaces in Electronic Materials - Proceedings of the International Symposium

ER -

Hsiao WC, Liu C-P, Yang CL, Sun LC, Hung T. Dopant profiling of metal-oxide semiconductor (MOS) structures with scanning electron microscopy. In Interfaces in Electronic Materials - Proceedings of the International Symposium. 2006. p. 180-183. (Proceedings - Electrochemical Society).