Dopant profiling of metal-oxide semiconductor (MOS) structures with scanning electron microscopy

W. C. Hsiao, C. P. Liu, C. L. Yang, L. C. Sun, Thomas Hung

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

This article describes the results of a detailed study on semiconductor dopant profiling with the scanning electron microscope using secondary electrons. The technique has been widely used to study the contrast of doped silicon as well as a metal-oxide semiconductor structure. The optimum experimental conditions for observing the contrast of the p/n junction areas were established by investigating the effect of microscope and material parameters including accelerating voltage [1], working distance, spot size, tilt angle [2,3] and chemical treatment [4]. The preparation of the cross-sectional sample for the imaging of the semiconductor doping profile in MOS structures is successfully demonstrated for the first time by direct-polishing. The contrast between the brighter p-type areas and the darker n-type areas is maximized at an accelerating voltage of 1 kV [5], and when a through-the-lens detector is used. We have studied the variation of doping contrast with specimen tilt and various chemical pre-treatments.

Original languageEnglish
Title of host publicationInterfaces in Electronic Materials - Proceedings of the International Symposium
Pages180-183
Number of pages4
Publication statusPublished - 2006
Event204th Electrochemical Society Fall Meeting - Orlando, FL, United States
Duration: 2003 Oct 122003 Oct 16

Publication series

NameProceedings - Electrochemical Society
VolumePV 2003-31

Other

Other204th Electrochemical Society Fall Meeting
CountryUnited States
CityOrlando, FL
Period03-10-1203-10-16

All Science Journal Classification (ASJC) codes

  • Engineering(all)

Fingerprint Dive into the research topics of 'Dopant profiling of metal-oxide semiconductor (MOS) structures with scanning electron microscopy'. Together they form a unique fingerprint.

  • Cite this

    Hsiao, W. C., Liu, C. P., Yang, C. L., Sun, L. C., & Hung, T. (2006). Dopant profiling of metal-oxide semiconductor (MOS) structures with scanning electron microscopy. In Interfaces in Electronic Materials - Proceedings of the International Symposium (pp. 180-183). (Proceedings - Electrochemical Society; Vol. PV 2003-31).