Doping-dependent changes in nitrogen 2p states in the diluted magnetic semiconductor Ga1-xCrxN

T. Takeuchi, Y. Harada, T. Tokushima, M. Taguchi, Y. Takata, A. Chainani, J. J. Kim, H. Makino, T. Yao, T. Yamamoto, T. Tsukamoto, S. Shin, K. Kobayashi

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Abstract

We study the electronic structure of the recently discovered diluted magnetic semiconductor Ga1-xCrxN (x=0.01-0.10). A systematic study of the changes in the occupied and unoccupied ligand (N) partial density of states (DOS) of the host lattice is carried out using N 1s soft x-ray emission and absorption spectroscopy, respectively. X-ray absorption measurements confirm the wurtzite N 2p DOS and substitutional doping of Cr into Ga sites. Coupled changes in the occupied and unoccupied N 2p character DOS of Ga1-xCrxN identify states responsible for ferromagnetism consistent with band structure calculations.

Original languageEnglish
Article number245323
Pages (from-to)1-4
Number of pages4
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume70
Issue number24
DOIs
Publication statusPublished - 2004 Dec

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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    Takeuchi, T., Harada, Y., Tokushima, T., Taguchi, M., Takata, Y., Chainani, A., Kim, J. J., Makino, H., Yao, T., Yamamoto, T., Tsukamoto, T., Shin, S., & Kobayashi, K. (2004). Doping-dependent changes in nitrogen 2p states in the diluted magnetic semiconductor Ga1-xCrxN. Physical Review B - Condensed Matter and Materials Physics, 70(24), 1-4. [245323]. https://doi.org/10.1103/PhysRevB.70.245323