We study the electronic structure of the recently discovered diluted magnetic semiconductor Ga1-xCrxN (x=0.01-0.10). A systematic study of the changes in the occupied and unoccupied ligand (N) partial density of states (DOS) of the host lattice is carried out using N 1s soft x-ray emission and absorption spectroscopy, respectively. X-ray absorption measurements confirm the wurtzite N 2p DOS and substitutional doping of Cr into Ga sites. Coupled changes in the occupied and unoccupied N 2p character DOS of Ga1-xCrxN identify states responsible for ferromagnetism consistent with band structure calculations.
|Number of pages||4|
|Journal||Physical Review B - Condensed Matter and Materials Physics|
|Publication status||Published - 2004 Dec|
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics