Doping effects on the dielectric properties of low temperature sintered lead-based ceramics

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Abstract

Doping effects on the dielectric properties of low temperature sintered lead-based ceramics were studied. PZT-based and 0.25Pb(Ni1/3Nb2/3)O3-0.75Pb(Zr0.52Ti0.48)O3 (PNN-PZT)-based ceramics, modified with Bi2O3, Fe2O3, CuO, MnO2, and Ba(Cu0.5W0.5)O3, were prepared by conventional mixed-oxide technique, with sintering temperature at 850-950 °C. Microstructural and compositional analyses of these low temperature sintered lead-based ceramics were carried out using X-ray diffraction (XRD) and scanning electron microscopy (SEM). In this paper, we successfully show that these additives were helpful in both lowering the sintering temperature and improving the dielectric properties. The preferred sintering condition is also reported. The following dielectric properties were obtained: εT 330 = 900, tan δ<10×10-3, ρ = 7.5 g/cm3 for the PZT-based family; εT 330 = 4000, tan δ = 35×10-4, ρ = 7.82 g/cm3 for the (PNN-PZT)-based family.

Original languageEnglish
Pages (from-to)1067-1076
Number of pages10
JournalMaterials Research Bulletin
Volume35
Issue number7
DOIs
Publication statusPublished - 2000 Jan 1

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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