Doping Nanoscale Graphene Domains Improves Magnetism in Hexagonal Boron Nitride

Mengmeng Fan, Jingjie Wu, Jiangtan Yuan, Liangzi Deng, Ning Zhong, Liang He, Jiewu Cui, Zixing Wang, Sushant Kumar Behera, Chenhao Zhang, Jiawei Lai, Ben Maan I. Jawdat, Robert Vajtai, Pritam Deb, Yang Huang, Jieshu Qian, Jiazhi Yang, James M. Tour, Jun Lou, Ching Wu ChuDongping Sun, Pulickel M. Ajayan

Research output: Contribution to journalArticlepeer-review

20 Citations (Scopus)

Abstract

Carbon doping can induce unique and interesting physical properties in hexagonal boron nitride (h-BN). Typically, isolated carbon atoms are doped into h-BN. Herein, however, the insertion of nanometer-scale graphene quantum dots (GQDs) is demonstrated as whole units into h-BN sheets to form h-CBN. The h-CBN is prepared by using GQDs as seed nucleations for the epitaxial growth of h-BN along the edges of GQDs without the assistance of metal catalysts. The resulting h-CBN sheets possess a uniform distrubution of GQDs in plane and a high porosity macroscopically. The h-CBN tends to form in small triangular sheets which suggests an enhanced crystallinity compared to the h-BN synthesized under the same conditions without GQDs. An enhanced ferromagnetism in the h-CBN emerges due to the spin polarization and charge asymmetry resulting from the high density of CN and CB bonds at the boundary between the GQDs and the h-BN domains. The saturation magnetic moment of h-CBN reaches 0.033 emu g −1 at 300 K, which is three times that of as-prepared single carbon-doped h-BN.

Original languageEnglish
Article number1805778
JournalAdvanced Materials
Volume31
Issue number12
DOIs
Publication statusPublished - 2019 Mar 22

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Mechanics of Materials
  • Mechanical Engineering

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