Dosage dependence of Ge quantum dots grown on carbon-implanted Si substrates

Masaaki Ogawa, Dong ho Cha, Joo young Lee, Kang L. Wang

Research output: Contribution to journalArticlepeer-review

Abstract

Carbon implantation effects on self-assembled Ge quantum dots (QDs) have been investigated. Carbon atoms were implanted at different dosage, 9.0×1014, 4.5×1015, and 9.0×1015 ions/cm2 using the same acceleration energy of 20 keV. A nominal amount, 6 monolayer (ML), of Ge was grown on the substrate at different growth temperatures ranging from 500 to 600 °C using solid source molecular beam epitaxy. The smallest Ge QDs with a 13 nm mean lateral diameter, a 1.2 nm mean height, and an areal density of 2.0×1011 cm-2 were obtained using the lowest dosage substrate at 550 °C. Raman measurement is carried out to investigate the optical phonons and strain.

Original languageEnglish
Pages (from-to)766-770
Number of pages5
JournalJournal of Crystal Growth
Volume301-302
Issue numberSPEC. ISS.
DOIs
Publication statusPublished - 2007 Apr

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

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