Carbon implantation effects on self-assembled Ge quantum dots (QDs) have been investigated. Carbon atoms were implanted at different dosage, 9.0×1014, 4.5×1015, and 9.0×1015 ions/cm2 using the same acceleration energy of 20 keV. A nominal amount, 6 monolayer (ML), of Ge was grown on the substrate at different growth temperatures ranging from 500 to 600 °C using solid source molecular beam epitaxy. The smallest Ge QDs with a 13 nm mean lateral diameter, a 1.2 nm mean height, and an areal density of 2.0×1011 cm-2 were obtained using the lowest dosage substrate at 550 °C. Raman measurement is carried out to investigate the optical phonons and strain.
All Science Journal Classification (ASJC) codes
- Condensed Matter Physics
- Inorganic Chemistry
- Materials Chemistry