Double δ-doped AlGaAs/InGaAs MOS-pHEMTs by using ozone water oxidation treatment

C. S. Lee; S. H. Yang; J. T. Hung; W. T. Chien; M. Y. Lin; Y. H. Liao; L. Y. Tseng; W. C. Hsu; C. S. Ho; B. Y. Chou; Y. N. Lai

doi:10.1109/ISNE.2010.5669168

Double δ-doped AlGaAs/InGaAs MOS-pHEMTs by using ozone water oxidation treatment

C. S. Lee, S. H. Yang, J. T. Hung, W. T. Chien, M. Y. Lin, Y. H. Liao, L. Y. Tseng, W. C. Hsu, C. S. Ho, B. Y. Chou, Y. N. Lai

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

This work investigates device performances of an AlGaAs/InGaAs metal-oxide-semiconductor pseudomorphic high electron mobility transistor (MOS-pHEMT) by using ozone water oxidation treatment. Experiment results indicate that the studied MOS-pHEMT has demonstrated superior device characteristics as compared to a conventional pHEMT without oxidation treatment on the same epitaxial structure. The studied MOS (conventional)-pHEMT exhibits improved power-added-efficiency (P.A.E.) of 39.6 (36) %, unity-gain cut-off frequency (f_T) of 19.3 (16.8) GHz, maximum oscillation frequency (f_max) of 30.6 (26.7) GHz, minimum noise figure (NF_min) of 1.21 (1.48) dB, and excellent two-terminal gate-drain breakdown voltage (BV_GD) of - 43.1 (-7.9) V, respectively.

Original language	English
Title of host publication	2010 International Symposium on Next-Generation Electronics, ISNE 2010 - Conference Program
Pages	178-181
Number of pages	4
DOIs	https://doi.org/10.1109/ISNE.2010.5669168
Publication status	Published - 2010
Event	2010 International Symposium on Next-Generation Electronics, ISNE 2010 - Kaohsiung, Taiwan Duration: 2010 Nov 18 → 2010 Nov 19

Publication series

Name	2010 International Symposium on Next-Generation Electronics, ISNE 2010 - Conference Program

Other

Other	2010 International Symposium on Next-Generation Electronics, ISNE 2010
Country/Territory	Taiwan
City	Kaohsiung
Period	10-11-18 → 10-11-19

All Science Journal Classification (ASJC) codes

Electrical and Electronic Engineering

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10.1109/ISNE.2010.5669168

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Lee, C. S., Yang, S. H., Hung, J. T., Chien, W. T., Lin, M. Y., Liao, Y. H., Tseng, L. Y., Hsu, W. C., Ho, C. S., Chou, B. Y., & Lai, Y. N. (2010). Double δ-doped AlGaAs/InGaAs MOS-pHEMTs by using ozone water oxidation treatment. In 2010 International Symposium on Next-Generation Electronics, ISNE 2010 - Conference Program (pp. 178-181). Article 5669168 (2010 International Symposium on Next-Generation Electronics, ISNE 2010 - Conference Program). https://doi.org/10.1109/ISNE.2010.5669168

@inproceedings{3f205f40a5d14b4eaf36c2a1e7fca4f3,

title = "Double δ-doped AlGaAs/InGaAs MOS-pHEMTs by using ozone water oxidation treatment",

abstract = "This work investigates device performances of an AlGaAs/InGaAs metal-oxide-semiconductor pseudomorphic high electron mobility transistor (MOS-pHEMT) by using ozone water oxidation treatment. Experiment results indicate that the studied MOS-pHEMT has demonstrated superior device characteristics as compared to a conventional pHEMT without oxidation treatment on the same epitaxial structure. The studied MOS (conventional)-pHEMT exhibits improved power-added-efficiency (P.A.E.) of 39.6 (36) %, unity-gain cut-off frequency (fT) of 19.3 (16.8) GHz, maximum oscillation frequency (fmax) of 30.6 (26.7) GHz, minimum noise figure (NFmin) of 1.21 (1.48) dB, and excellent two-terminal gate-drain breakdown voltage (BVGD) of - 43.1 (-7.9) V, respectively.",

author = "Lee, {C. S.} and Yang, {S. H.} and Hung, {J. T.} and Chien, {W. T.} and Lin, {M. Y.} and Liao, {Y. H.} and Tseng, {L. Y.} and Hsu, {W. C.} and Ho, {C. S.} and Chou, {B. Y.} and Lai, {Y. N.}",

year = "2010",

doi = "10.1109/ISNE.2010.5669168",

language = "English",

isbn = "9781424466948",

series = "2010 International Symposium on Next-Generation Electronics, ISNE 2010 - Conference Program",

pages = "178--181",

booktitle = "2010 International Symposium on Next-Generation Electronics, ISNE 2010 - Conference Program",

note = "2010 International Symposium on Next-Generation Electronics, ISNE 2010 ; Conference date: 18-11-2010 Through 19-11-2010",

}

Lee, CS, Yang, SH, Hung, JT, Chien, WT, Lin, MY, Liao, YH, Tseng, LY, Hsu, WC, Ho, CS, Chou, BY & Lai, YN 2010, Double δ-doped AlGaAs/InGaAs MOS-pHEMTs by using ozone water oxidation treatment. in 2010 International Symposium on Next-Generation Electronics, ISNE 2010 - Conference Program., 5669168, 2010 International Symposium on Next-Generation Electronics, ISNE 2010 - Conference Program, pp. 178-181, 2010 International Symposium on Next-Generation Electronics, ISNE 2010, Kaohsiung, Taiwan, 10-11-18. https://doi.org/10.1109/ISNE.2010.5669168

Double δ-doped AlGaAs/InGaAs MOS-pHEMTs by using ozone water oxidation treatment. / Lee, C. S.; Yang, S. H.; Hung, J. T. et al.
2010 International Symposium on Next-Generation Electronics, ISNE 2010 - Conference Program. 2010. p. 178-181 5669168 (2010 International Symposium on Next-Generation Electronics, ISNE 2010 - Conference Program).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

TY - GEN

T1 - Double δ-doped AlGaAs/InGaAs MOS-pHEMTs by using ozone water oxidation treatment

AU - Lee, C. S.

AU - Yang, S. H.

AU - Hung, J. T.

AU - Chien, W. T.

AU - Lin, M. Y.

AU - Liao, Y. H.

AU - Tseng, L. Y.

AU - Hsu, W. C.

AU - Ho, C. S.

AU - Chou, B. Y.

AU - Lai, Y. N.

PY - 2010

Y1 - 2010

N2 - This work investigates device performances of an AlGaAs/InGaAs metal-oxide-semiconductor pseudomorphic high electron mobility transistor (MOS-pHEMT) by using ozone water oxidation treatment. Experiment results indicate that the studied MOS-pHEMT has demonstrated superior device characteristics as compared to a conventional pHEMT without oxidation treatment on the same epitaxial structure. The studied MOS (conventional)-pHEMT exhibits improved power-added-efficiency (P.A.E.) of 39.6 (36) %, unity-gain cut-off frequency (fT) of 19.3 (16.8) GHz, maximum oscillation frequency (fmax) of 30.6 (26.7) GHz, minimum noise figure (NFmin) of 1.21 (1.48) dB, and excellent two-terminal gate-drain breakdown voltage (BVGD) of - 43.1 (-7.9) V, respectively.

AB - This work investigates device performances of an AlGaAs/InGaAs metal-oxide-semiconductor pseudomorphic high electron mobility transistor (MOS-pHEMT) by using ozone water oxidation treatment. Experiment results indicate that the studied MOS-pHEMT has demonstrated superior device characteristics as compared to a conventional pHEMT without oxidation treatment on the same epitaxial structure. The studied MOS (conventional)-pHEMT exhibits improved power-added-efficiency (P.A.E.) of 39.6 (36) %, unity-gain cut-off frequency (fT) of 19.3 (16.8) GHz, maximum oscillation frequency (fmax) of 30.6 (26.7) GHz, minimum noise figure (NFmin) of 1.21 (1.48) dB, and excellent two-terminal gate-drain breakdown voltage (BVGD) of - 43.1 (-7.9) V, respectively.

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U2 - 10.1109/ISNE.2010.5669168

DO - 10.1109/ISNE.2010.5669168

M3 - Conference contribution

AN - SCOPUS:78751536511

SN - 9781424466948

T3 - 2010 International Symposium on Next-Generation Electronics, ISNE 2010 - Conference Program

SP - 178

EP - 181

BT - 2010 International Symposium on Next-Generation Electronics, ISNE 2010 - Conference Program

T2 - 2010 International Symposium on Next-Generation Electronics, ISNE 2010

Y2 - 18 November 2010 through 19 November 2010

ER -

Lee CS, Yang SH, Hung JT, Chien WT, Lin MY, Liao YH et al. Double δ-doped AlGaAs/InGaAs MOS-pHEMTs by using ozone water oxidation treatment. In 2010 International Symposium on Next-Generation Electronics, ISNE 2010 - Conference Program. 2010. p. 178-181. 5669168. (2010 International Symposium on Next-Generation Electronics, ISNE 2010 - Conference Program). doi: 10.1109/ISNE.2010.5669168

Double δ-doped AlGaAs/InGaAs MOS-pHEMTs by using ozone water oxidation treatment

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