Double δ-doped AlGaAs/InGaAs MOS-pHEMTs by using ozone water oxidation treatment

C. S. Lee, S. H. Yang, J. T. Hung, W. T. Chien, M. Y. Lin, Y. H. Liao, L. Y. Tseng, W. C. Hsu, C. S. Ho, B. Y. Chou, Y. N. Lai

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

This work investigates device performances of an AlGaAs/InGaAs metal-oxide-semiconductor pseudomorphic high electron mobility transistor (MOS-pHEMT) by using ozone water oxidation treatment. Experiment results indicate that the studied MOS-pHEMT has demonstrated superior device characteristics as compared to a conventional pHEMT without oxidation treatment on the same epitaxial structure. The studied MOS (conventional)-pHEMT exhibits improved power-added-efficiency (P.A.E.) of 39.6 (36) %, unity-gain cut-off frequency (fT) of 19.3 (16.8) GHz, maximum oscillation frequency (fmax) of 30.6 (26.7) GHz, minimum noise figure (NFmin) of 1.21 (1.48) dB, and excellent two-terminal gate-drain breakdown voltage (BVGD) of - 43.1 (-7.9) V, respectively.

Original languageEnglish
Title of host publication2010 International Symposium on Next-Generation Electronics, ISNE 2010 - Conference Program
Pages178-181
Number of pages4
DOIs
Publication statusPublished - 2010 Dec 1
Event2010 International Symposium on Next-Generation Electronics, ISNE 2010 - Kaohsiung, Taiwan
Duration: 2010 Nov 182010 Nov 19

Publication series

Name2010 International Symposium on Next-Generation Electronics, ISNE 2010 - Conference Program

Other

Other2010 International Symposium on Next-Generation Electronics, ISNE 2010
CountryTaiwan
CityKaohsiung
Period10-11-1810-11-19

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

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