@inproceedings{3f205f40a5d14b4eaf36c2a1e7fca4f3,
title = "Double δ-doped AlGaAs/InGaAs MOS-pHEMTs by using ozone water oxidation treatment",
abstract = "This work investigates device performances of an AlGaAs/InGaAs metal-oxide-semiconductor pseudomorphic high electron mobility transistor (MOS-pHEMT) by using ozone water oxidation treatment. Experiment results indicate that the studied MOS-pHEMT has demonstrated superior device characteristics as compared to a conventional pHEMT without oxidation treatment on the same epitaxial structure. The studied MOS (conventional)-pHEMT exhibits improved power-added-efficiency (P.A.E.) of 39.6 (36) %, unity-gain cut-off frequency (fT) of 19.3 (16.8) GHz, maximum oscillation frequency (fmax) of 30.6 (26.7) GHz, minimum noise figure (NFmin) of 1.21 (1.48) dB, and excellent two-terminal gate-drain breakdown voltage (BVGD) of - 43.1 (-7.9) V, respectively.",
author = "Lee, {C. S.} and Yang, {S. H.} and Hung, {J. T.} and Chien, {W. T.} and Lin, {M. Y.} and Liao, {Y. H.} and Tseng, {L. Y.} and Hsu, {W. C.} and Ho, {C. S.} and Chou, {B. Y.} and Lai, {Y. N.}",
year = "2010",
month = dec,
day = "1",
doi = "10.1109/ISNE.2010.5669168",
language = "English",
isbn = "9781424466948",
series = "2010 International Symposium on Next-Generation Electronics, ISNE 2010 - Conference Program",
pages = "178--181",
booktitle = "2010 International Symposium on Next-Generation Electronics, ISNE 2010 - Conference Program",
note = "2010 International Symposium on Next-Generation Electronics, ISNE 2010 ; Conference date: 18-11-2010 Through 19-11-2010",
}