Double-band anticrossing in GaAsSbN induced by nitrogen and antimony incorporation

Photoreflectance spectroscopy is utilized to study the effect of dilute nitrogen and antimony on the electronic band structure of as-grown GaAs1-x-ySbxNy alloys, which are potential materials for 1 eV solar cells and long-wavelength optoelectronic devices. The band gap, spin-orbit splitting, and valence-band maximum to the N-induced upward conduction-band transition, for the first time, are obtained and analyzed using the double-band anticrossing model. The EN level with respect to the GaAs valence-band maximum and the interaction potential are determined as 1.540 and 2.839 eV, respectively. The results are helpful information for intermediate-band solar cell application.