Double-transconductance-plateau characteristics in InGaAs/GaAs real-space transfer high-electron-mobility transistor

Ching Sung Lee, Wei-Chou Hsu

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

Double-transductance-plateau characteristics in a δ-doped InGaAs/GaAs high-electron-mobility transistors (HEMT) was investigated. It was observed that gate bias decreased from 0 to -2.5 V with -0.5 V per step. It was found that at VDS, the maximum drain current density was 382 mA/mm. It was also observed that the 20 Å In0.28Ga0.72As layer acted as the smoothing layer of the superlattice spacer.

Original languageEnglish
Pages (from-to)3618-3620
Number of pages3
JournalApplied Physics Letters
Volume84
Issue number18
DOIs
Publication statusPublished - 2004 May 3

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transconductance
high electron mobility transistors
plateaus
smoothing
spacers
current density

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

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Double-transconductance-plateau characteristics in InGaAs/GaAs real-space transfer high-electron-mobility transistor. / Lee, Ching Sung; Hsu, Wei-Chou.

In: Applied Physics Letters, Vol. 84, No. 18, 03.05.2004, p. 3618-3620.

Research output: Contribution to journalArticle

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