Double-transductance-plateau characteristics in a δ-doped InGaAs/GaAs high-electron-mobility transistors (HEMT) was investigated. It was observed that gate bias decreased from 0 to -2.5 V with -0.5 V per step. It was found that at VDS, the maximum drain current density was 382 mA/mm. It was also observed that the 20 Å In0.28Ga0.72As layer acted as the smoothing layer of the superlattice spacer.
All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)