Abstract
Double-transductance-plateau characteristics in a δ-doped InGaAs/GaAs high-electron-mobility transistors (HEMT) was investigated. It was observed that gate bias decreased from 0 to -2.5 V with -0.5 V per step. It was found that at VDS, the maximum drain current density was 382 mA/mm. It was also observed that the 20 Å In0.28Ga0.72As layer acted as the smoothing layer of the superlattice spacer.
Original language | English |
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Pages (from-to) | 3618-3620 |
Number of pages | 3 |
Journal | Applied Physics Letters |
Volume | 84 |
Issue number | 18 |
DOIs | |
Publication status | Published - 2004 May 3 |
All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)