Double-transconductance-plateau characteristics in InGaAs/GaAs real-space transfer high-electron-mobility transistor

Ching Sung Lee; Wei Chou Hsu

doi:10.1063/1.1738512

Double-transconductance-plateau characteristics in InGaAs/GaAs real-space transfer high-electron-mobility transistor

Ching Sung Lee
, Wei Chou Hsu

Institute of Microelectronics

Research output: Contribution to journal › Article › peer-review

6 Citations (Scopus)

Abstract

Double-transductance-plateau characteristics in a δ-doped InGaAs/GaAs high-electron-mobility transistors (HEMT) was investigated. It was observed that gate bias decreased from 0 to -2.5 V with -0.5 V per step. It was found that at V_DS, the maximum drain current density was 382 mA/mm. It was also observed that the 20 Å In_0.28Ga_0.72As layer acted as the smoothing layer of the superlattice spacer.

Original language	English
Pages (from-to)	3618-3620
Number of pages	3
Journal	Applied Physics Letters
Volume	84
Issue number	18
DOIs	https://doi.org/10.1063/1.1738512
Publication status	Published - 2004 May 3

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.1738512

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title = "Double-transconductance-plateau characteristics in InGaAs/GaAs real-space transfer high-electron-mobility transistor",

abstract = "Double-transductance-plateau characteristics in a δ-doped InGaAs/GaAs high-electron-mobility transistors (HEMT) was investigated. It was observed that gate bias decreased from 0 to -2.5 V with -0.5 V per step. It was found that at VDS, the maximum drain current density was 382 mA/mm. It was also observed that the 20 {\AA} In0.28Ga0.72As layer acted as the smoothing layer of the superlattice spacer.",

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AU - Hsu, Wei Chou

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N2 - Double-transductance-plateau characteristics in a δ-doped InGaAs/GaAs high-electron-mobility transistors (HEMT) was investigated. It was observed that gate bias decreased from 0 to -2.5 V with -0.5 V per step. It was found that at VDS, the maximum drain current density was 382 mA/mm. It was also observed that the 20 Å In0.28Ga0.72As layer acted as the smoothing layer of the superlattice spacer.

AB - Double-transductance-plateau characteristics in a δ-doped InGaAs/GaAs high-electron-mobility transistors (HEMT) was investigated. It was observed that gate bias decreased from 0 to -2.5 V with -0.5 V per step. It was found that at VDS, the maximum drain current density was 382 mA/mm. It was also observed that the 20 Å In0.28Ga0.72As layer acted as the smoothing layer of the superlattice spacer.

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JO - Applied Physics Letters

JF - Applied Physics Letters

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ER -

Double-transconductance-plateau characteristics in InGaAs/GaAs real-space transfer high-electron-mobility transistor

Abstract

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