Drain Induced Barrier Lowering (DIBL) effect on the intrinsic capacitances of nano-scale MOSFETs

M. A. Karim, Sriramkumar Venugopalan, Yogesh Singh Chauhan, Darsen Lu, Ali Niknejad, Chenming Hu

Research output: Chapter in Book/Report/Conference proceedingConference contribution

8 Citations (Scopus)

Abstract

This paper presents a physical explanation of MOSFET intrinsic gate to drain capacitance (CCD) going negative due to Drain Induced Barrier Lowering (DIBL) effect. For the sub-90nm MOS devices, DIBL effect may be dominant enough to guide CGD to negative if de-embedded from parallel extrinsic overlap, outer and inner fringing capacitances. The possibility of this phenomenon is evident from the results of our 2-D TCAD simulations of conventional bulk MOS structure. However negative capacitances lead to non-convergence issue in circuit simulators and need to be bounded in MOS devices compact models.

Original languageEnglish
Title of host publicationTechnical Proceedings of the 2011 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2011
Pages814-817
Number of pages4
Publication statusPublished - 2011 Nov 23
EventNanotechnology 2011: Electronics, Devices, Fabrication, MEMS, Fluidics and Computational - 2011 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2011 - Boston, MA, United States
Duration: 2011 Jun 132011 Jun 16

Publication series

NameTechnical Proceedings of the 2011 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2011
Volume2

Other

OtherNanotechnology 2011: Electronics, Devices, Fabrication, MEMS, Fluidics and Computational - 2011 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2011
CountryUnited States
CityBoston, MA
Period11-06-1311-06-16

All Science Journal Classification (ASJC) codes

  • Hardware and Architecture
  • Electrical and Electronic Engineering

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    Karim, M. A., Venugopalan, S., Chauhan, Y. S., Lu, D., Niknejad, A., & Hu, C. (2011). Drain Induced Barrier Lowering (DIBL) effect on the intrinsic capacitances of nano-scale MOSFETs. In Technical Proceedings of the 2011 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2011 (pp. 814-817). (Technical Proceedings of the 2011 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2011; Vol. 2).