Dramatic improving luminous efficiency of organic light emitting diodes under low driving current using nitrogen doped hole transporter

W. J. Lee, Y. K. Fang, H. C. Chiang, S. F. Ting, S. F. Chen, W. R. Chang, Yu-Cheng Lin, T. Y. Lin, J. J. Ho

Research output: Contribution to journalArticle

9 Citations (Scopus)

Abstract

In this letter, output luminance, current efficiency and power efficiency of the organic light emitting diodes (OLEDs) with N2 doped hole transport layer (HTL) have been studied in detail. Experimental results show that the current efficiency and the power efficiency thus in turn the output luminance of OLEDs prepared with HTL evaporated in the optimum N2 gas ambient pressure of 1 × 10-4 Torr are improved about 13, 9 and 12 times, respectively, under 2.7 mA/cm2 driving current. The significant improving mechanism has been illustrated comprehensively with a series of schematic models.

Original languageEnglish
Pages (from-to)1127-1130
Number of pages4
JournalSolid-State Electronics
Volume47
Issue number6
DOIs
Publication statusPublished - 2003 Jun 1
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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    Lee, W. J., Fang, Y. K., Chiang, H. C., Ting, S. F., Chen, S. F., Chang, W. R., Lin, Y-C., Lin, T. Y., & Ho, J. J. (2003). Dramatic improving luminous efficiency of organic light emitting diodes under low driving current using nitrogen doped hole transporter. Solid-State Electronics, 47(6), 1127-1130. https://doi.org/10.1016/S0038-1101(02)00497-5