Dramatic reduction of optical crosstalk in deep-submicrometer CMOS imager with air gap guard ring

T. H. Hsu, Y. K. Fang, D. N. Yaung, S. G. Wuu, H. C. Chien, C. S. Wang, J. S. Lin, C. H. Tseng, S. F. Chen, C. S. Lin, Yu-Cheng Lin

Research output: Contribution to journalLetter

13 Citations (Scopus)

Abstract

A novel dielectric structure, air gap guard ring, has been successfully developed to reduce optical crosstalk thus improving pixel sensitivity of CMOS image sensor with 0.18-μm technology. Based on refraction index (RI) differences between dielectric films (RI = 1.4 ≈ 1.6) and air gap (RI = 1), total internal reflection occurred at dielectric-film/ air-gap interface, thus the incident light is concentrated in selected pixel. Excellent optical performances have been demonstrated in 3.0 × 3.0 μm pixel. Optical spatial crosstalk achieves 80% reduction at 20° incidence angle and significantly alleviates the pixel sensitivity degradation with larger angle of incident light.

Original languageEnglish
Pages (from-to)375-377
Number of pages3
JournalIEEE Electron Device Letters
Volume25
Issue number6
DOIs
Publication statusPublished - 2004 Jun 1
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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    Hsu, T. H., Fang, Y. K., Yaung, D. N., Wuu, S. G., Chien, H. C., Wang, C. S., Lin, J. S., Tseng, C. H., Chen, S. F., Lin, C. S., & Lin, Y-C. (2004). Dramatic reduction of optical crosstalk in deep-submicrometer CMOS imager with air gap guard ring. IEEE Electron Device Letters, 25(6), 375-377. https://doi.org/10.1109/LED.2004.828995