Drastic reduction of series resistance in doped semiconductor distributed Bragg reflectors for surface-emitting lasers

K. Tai; L. Yang; Y. H. Wang; J. D. Wynn; A. Y. Cho

doi:10.1063/1.102869

Drastic reduction of series resistance in doped semiconductor distributed Bragg reflectors for surface-emitting lasers

K. Tai, L. Yang, Y. H. Wang, J. D. Wynn, A. Y. Cho

Institute of Microelectronics

Research output: Contribution to journal › Article › peer-review

156 Citations (Scopus)

Abstract

Modifications to reduce the series resistance in p-type semiconductor distributed Bragg reflectors (DBR) consisting of ten pairs of quarter-wavelength GaAs (high refractive index)/Al_0.7Ga_0.3As (low index) layers were made by inserting an intermediate Al_0.35Ga _0.65As layer or a 200 Å superlattice of GaAs(10 Å)/Al_0.7Ga_0.3As (10 Å) at the GaAs/Al _0.7Ga_0.3As heterointerfaces. The specific DBR series resistance was reduced by two orders of magnitude to about 6.2×10 ^-5 Ω cm². These modifications did not alter the optical reflectivity and nearly identical reflection spectra were measured.

Original language	English
Pages (from-to)	2496-2498
Number of pages	3
Journal	Applied Physics Letters
Volume	56
Issue number	25
DOIs	https://doi.org/10.1063/1.102869
Publication status	Published - 1990

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.102869

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abstract = "Modifications to reduce the series resistance in p-type semiconductor distributed Bragg reflectors (DBR) consisting of ten pairs of quarter-wavelength GaAs (high refractive index)/Al0.7Ga0.3As (low index) layers were made by inserting an intermediate Al0.35Ga 0.65As layer or a 200 {\AA} superlattice of GaAs(10 {\AA})/Al0.7Ga0.3As (10 {\AA}) at the GaAs/Al 0.7Ga0.3As heterointerfaces. The specific DBR series resistance was reduced by two orders of magnitude to about 6.2×10 -5 Ω cm2. These modifications did not alter the optical reflectivity and nearly identical reflection spectra were measured.",

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T1 - Drastic reduction of series resistance in doped semiconductor distributed Bragg reflectors for surface-emitting lasers

AU - Tai, K.

AU - Yang, L.

AU - Wang, Y. H.

AU - Wynn, J. D.

AU - Cho, A. Y.

PY - 1990

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AB - Modifications to reduce the series resistance in p-type semiconductor distributed Bragg reflectors (DBR) consisting of ten pairs of quarter-wavelength GaAs (high refractive index)/Al0.7Ga0.3As (low index) layers were made by inserting an intermediate Al0.35Ga 0.65As layer or a 200 Å superlattice of GaAs(10 Å)/Al0.7Ga0.3As (10 Å) at the GaAs/Al 0.7Ga0.3As heterointerfaces. The specific DBR series resistance was reduced by two orders of magnitude to about 6.2×10 -5 Ω cm2. These modifications did not alter the optical reflectivity and nearly identical reflection spectra were measured.

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Drastic reduction of series resistance in doped semiconductor distributed Bragg reflectors for surface-emitting lasers

Abstract

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