Drastic reduction of series resistance in doped semiconductor distributed Bragg reflectors for surface-emitting lasers

K. Tai, L. Yang, Yeong-Her Wang, J. D. Wynn, A. Y. Cho

Research output: Contribution to journalArticle

136 Citations (Scopus)

Abstract

Modifications to reduce the series resistance in p-type semiconductor distributed Bragg reflectors (DBR) consisting of ten pairs of quarter-wavelength GaAs (high refractive index)/Al0.7Ga0.3As (low index) layers were made by inserting an intermediate Al0.35Ga 0.65As layer or a 200 Å superlattice of GaAs(10 Å)/Al0.7Ga0.3As (10 Å) at the GaAs/Al 0.7Ga0.3As heterointerfaces. The specific DBR series resistance was reduced by two orders of magnitude to about 6.2×10 -5 Ω cm2. These modifications did not alter the optical reflectivity and nearly identical reflection spectra were measured.

Original languageEnglish
Pages (from-to)2496-2498
Number of pages3
JournalApplied Physics Letters
Volume56
Issue number25
DOIs
Publication statusPublished - 1990 Dec 1

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Bragg reflectors
surface emitting lasers
p-type semiconductors
refractivity
reflectance
wavelengths

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

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Drastic reduction of series resistance in doped semiconductor distributed Bragg reflectors for surface-emitting lasers. / Tai, K.; Yang, L.; Wang, Yeong-Her; Wynn, J. D.; Cho, A. Y.

In: Applied Physics Letters, Vol. 56, No. 25, 01.12.1990, p. 2496-2498.

Research output: Contribution to journalArticle

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T1 - Drastic reduction of series resistance in doped semiconductor distributed Bragg reflectors for surface-emitting lasers

AU - Tai, K.

AU - Yang, L.

AU - Wang, Yeong-Her

AU - Wynn, J. D.

AU - Cho, A. Y.

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