Modifications to reduce the series resistance in p-type semiconductor distributed Bragg reflectors (DBR) consisting of ten pairs of quarter-wavelength GaAs (high refractive index)/Al0.7Ga0.3As (low index) layers were made by inserting an intermediate Al0.35Ga 0.65As layer or a 200 Å superlattice of GaAs(10 Å)/Al0.7Ga0.3As (10 Å) at the GaAs/Al 0.7Ga0.3As heterointerfaces. The specific DBR series resistance was reduced by two orders of magnitude to about 6.2×10 -5 Ω cm2. These modifications did not alter the optical reflectivity and nearly identical reflection spectra were measured.
All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)