Drift region doping effects on characteristics and reliability of high-voltage n-type metal-oxide-semiconductor transistors

Jone F. Chen, Chun Po Chang, Yu Ming Liu, Yan Lin Tsai, Hao Tang Hsu, Chih Yuan Chen, Hann Ping Hwang

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

In this study, off-state breakdown voltage (VBD) and hot-carrier-induced degradation in high-voltage n-type metal-oxide-semiconductor transistors with various BF2 implantation doses in the n- drift region are investigated. Results show that a higher BF2 implantation dose results in a higher VBD but leads to a greater hot-carrier-induced device degradation. Experimental data and technology computer-aided design simulations suggest that the higher VBD is due to the suppression of gate-induced drain current. On the other hand, the greater hot-carrier-induced device degradation can be explained by a lower net donor concentration and a different current-flow path, which is closer to the Si-SiO2 interface.

Original languageEnglish
Article number01AD03
JournalJapanese Journal of Applied Physics
Volume55
Issue number1
DOIs
Publication statusPublished - 2016 Jan

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

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