Dry etch challenges of 0.25 μm dual damascene structures

R. F. Schnabel, D. Dobuzinsky, J. Gambino, K. P. Muller, F. Wang, D. C. Perng, H. Palm

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Abstract

This paper investigates the influence of etch process parameters on the geometry of dual damascene patterns. Etch residues and a via taper are found to depend strongly on antireflection coating (ARC) etch time and O2 flow. Furthermore, they have significant impact on the metal fill. ARC residues and polymer formation during the interconnect line etch are identified to be responsible for the observed features. Using an optimized etch a dual damascene process has been integrated into 0.25 μm three metal level structures.

Original languageEnglish
Pages (from-to)59-65
Number of pages7
JournalMicroelectronic Engineering
Volume37-38
DOIs
Publication statusPublished - 1997 Nov

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All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering

Cite this

Schnabel, R. F., Dobuzinsky, D., Gambino, J., Muller, K. P., Wang, F., Perng, D. C., & Palm, H. (1997). Dry etch challenges of 0.25 μm dual damascene structures. Microelectronic Engineering, 37-38, 59-65. https://doi.org/10.1016/S0167-9317(97)00094-4