Dry etch challenges of 0.25 μm dual damascene structures

R. F. Schnabel; D. Dobuzinsky; J. Gambino; K. P. Muller; F. Wang; D. C. Perng; H. Palm

doi:10.1016/S0167-9317(97)00094-4

Dry etch challenges of 0.25 μm dual damascene structures

R. F. Schnabel, D. Dobuzinsky, J. Gambino, K. P. Muller, F. Wang, D. C. Perng, H. Palm

Research output: Contribution to journal › Article › peer-review

15 Citations (Scopus)

Abstract

This paper investigates the influence of etch process parameters on the geometry of dual damascene patterns. Etch residues and a via taper are found to depend strongly on antireflection coating (ARC) etch time and O₂ flow. Furthermore, they have significant impact on the metal fill. ARC residues and polymer formation during the interconnect line etch are identified to be responsible for the observed features. Using an optimized etch a dual damascene process has been integrated into 0.25 μm three metal level structures.

Original language	English
Pages (from-to)	59-65
Number of pages	7
Journal	Microelectronic Engineering
Volume	37-38
DOIs	https://doi.org/10.1016/S0167-9317(97)00094-4
Publication status	Published - 1997 Nov

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Condensed Matter Physics
Surfaces, Coatings and Films
Electrical and Electronic Engineering

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10.1016/S0167-9317(97)00094-4

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title = "Dry etch challenges of 0.25 μm dual damascene structures",

abstract = "This paper investigates the influence of etch process parameters on the geometry of dual damascene patterns. Etch residues and a via taper are found to depend strongly on antireflection coating (ARC) etch time and O2 flow. Furthermore, they have significant impact on the metal fill. ARC residues and polymer formation during the interconnect line etch are identified to be responsible for the observed features. Using an optimized etch a dual damascene process has been integrated into 0.25 μm three metal level structures.",

author = "Schnabel, {R. F.} and D. Dobuzinsky and J. Gambino and Muller, {K. P.} and F. Wang and Perng, {D. C.} and H. Palm",

year = "1997",

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doi = "10.1016/S0167-9317(97)00094-4",

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T1 - Dry etch challenges of 0.25 μm dual damascene structures

AU - Schnabel, R. F.

AU - Dobuzinsky, D.

AU - Gambino, J.

AU - Muller, K. P.

AU - Wang, F.

AU - Perng, D. C.

AU - Palm, H.

PY - 1997/11

Y1 - 1997/11

N2 - This paper investigates the influence of etch process parameters on the geometry of dual damascene patterns. Etch residues and a via taper are found to depend strongly on antireflection coating (ARC) etch time and O2 flow. Furthermore, they have significant impact on the metal fill. ARC residues and polymer formation during the interconnect line etch are identified to be responsible for the observed features. Using an optimized etch a dual damascene process has been integrated into 0.25 μm three metal level structures.

AB - This paper investigates the influence of etch process parameters on the geometry of dual damascene patterns. Etch residues and a via taper are found to depend strongly on antireflection coating (ARC) etch time and O2 flow. Furthermore, they have significant impact on the metal fill. ARC residues and polymer formation during the interconnect line etch are identified to be responsible for the observed features. Using an optimized etch a dual damascene process has been integrated into 0.25 μm three metal level structures.

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VL - 37-38

SP - 59

EP - 65

JO - Microelectronic Engineering

JF - Microelectronic Engineering

SN - 0167-9317

ER -

Dry etch challenges of 0.25 μm dual damascene structures

Abstract

All Science Journal Classification (ASJC) codes

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