Dual-wavelength GaN-based LEDs grown on truncated hexagonal pyramids formed by selective-area regrowth on si-implanted GaN templates

Ming Lun Lee, Yu Hsiang Yeh, Shang Ju Tu, P. C. Chen, Ming Jui Wu, Wei Chih Lai, Jinn Kong Sheu

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

GaN-based blue light-emitting diodes (LEDs) with micro truncated hexagonal pyramid (THP) array were grown on selective-area Siimplanted GaN (SIG) templates. The GaN epitaxial layer regrown on the SIG templates exhibited selective growth and subsequent lateral growth to form the THP array. The observed selective-area growth was attributed to the different crystal structures between the Si-implanted and implantationfree regions. Consequently, LEDs grown on the GaN THP array emitted broad electroluminescence spectra with multiple peaks. Spatially resolved cathodoluminescence revealed that the broad spectra originated from different areas within each THP. Transmission electron microscopy showed the GaN-based epitaxial layers, including InGaN/GaN multi-quantum wells regrown at different growth rates (or with different In content in the InGaN wells) between the semi-polar and c-face planes of each THP.

Original languageEnglish
Pages (from-to)A864-A871
JournalOptics Express
Volume21
Issue number105
DOIs
Publication statusPublished - 2013 Sep 9

All Science Journal Classification (ASJC) codes

  • Atomic and Molecular Physics, and Optics

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