In this letter, the dynamic turn-on mechanism of the n-MOSFET under high-current-stress event is investigated by using a real-time current and voltage measurement. Results reveal the existence of "self-consistent effect," i.e., the turn-on region of the parasitic n-p-n bipolar can change from one region to another region and increases with the stress current (ID). Furthermore, experimental data show that the minimum substrate potential to sustain a stable snapback phenomenon is 0.9 V and increases with ID instead of 0.6-0.8 V and independent of ID as reported in early literatures.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering