Abstract
In this letter, the dynamic turn-on mechanism of the n-MOSFET under high-current-stress event is investigated by using a real-time current and voltage measurement. Results reveal the existence of "self-consistent effect," i.e., the turn-on region of the parasitic n-p-n bipolar can change from one region to another region and increases with the stress current (ID). Furthermore, experimental data show that the minimum substrate potential to sustain a stable snapback phenomenon is 0.9 V and increases with ID instead of 0.6-0.8 V and independent of ID as reported in early literatures.
Original language | English |
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Pages (from-to) | 895-897 |
Number of pages | 3 |
Journal | IEEE Electron Device Letters |
Volume | 29 |
Issue number | 8 |
DOIs | |
Publication status | Published - 2008 Aug |
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering