Dynamic turn-on mechanism of the n-MOSFET under high-current stress

Dao Hong Yang, Jone-Fang Chen, Jian Hsing Lee, Kuo Ming Wu

Research output: Contribution to journalArticle

16 Citations (Scopus)

Abstract

In this letter, the dynamic turn-on mechanism of the n-MOSFET under high-current-stress event is investigated by using a real-time current and voltage measurement. Results reveal the existence of "self-consistent effect," i.e., the turn-on region of the parasitic n-p-n bipolar can change from one region to another region and increases with the stress current (ID). Furthermore, experimental data show that the minimum substrate potential to sustain a stable snapback phenomenon is 0.9 V and increases with ID instead of 0.6-0.8 V and independent of ID as reported in early literatures.

Original languageEnglish
Pages (from-to)895-897
Number of pages3
JournalIEEE Electron Device Letters
Volume29
Issue number8
DOIs
Publication statusPublished - 2008 Aug 1

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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