Effect of AlGaAs cladding layer on GaInNAs/GaAs MQW p-i-n photodetector

Y. F. Chen, W. C. Chen, Wen-Kuei Chuang, Y. K. Su, H. L. Tsai

Research output: Contribution to journalConference article

Abstract

The electronic properties of GaInNAs/GaAs multiple-quantum-well (MQW) p-i-n photodetector with AlGaAs cladding layer have been studied. By applying a higher band gap Al0.3Ga0.7As to the photodetector, a substantial reduction in dark current was observed owing to an inherent difficulty for holes to surmount the high potential barrier between MQW and the cladding layer heterojunction under a reverse bias. The dark current obtained was as low as 4.1 pA at -3.5 V for a device with Al0.3Ga 0.7As cladding layer as compared to 22 μA also at -3.5 V for a similar device without the Al0.3Ga0.7As cladding layer. The photo/dark current contrast ratios obtained were 4.2×104 and 11, respectively, for devices with and without an Al0.3Ga 0.7As cladding layer at -3.5 V. In addition, peak responsivity of 1 mA/W was measured at around 1150 nm. Two orders of magnitude increase in the rejection ratio were realized between 1150 and 1250 nm at -2.0 V. The GaInNAs/GaAs MQW p-i-n photodetector was demonstrated with the AlGaAs cladding layer potentially providing a higher photo/dark current contrast ratio and higher responsivity rejection ratio.

Original languageEnglish
Pages (from-to)2136-2138
Number of pages3
JournalPhysica Status Solidi (C) Current Topics in Solid State Physics
Volume5
Issue number6
DOIs
Publication statusPublished - 2008 Dec 1
Event7th International Conference of Nitride Semiconductors, ICNS-7 - Las Vegas, NV, United States
Duration: 2007 Sep 162007 Sep 21

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics

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