Effect of amorphous Si thickness on the formation of SiC nanoparticles during high vacuum annealing

Chen-Kuei Chung, B. H. Wu, T. S. Chen, C. C. Peng, T. R. Shih

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

In this paper, a novel approach for the formation of SiC nanoparticles (np-SiC) has been demonstrated by annealing the three-layer a-Si/C/a-Si film on a Si(100) substrate. The np-SiC formation strongly depends on the amorphous Si (a-Si) thickness and annealing temperature. Both three-layer a-Si/C/a-Si structures in different thickness i.e. 50/200/50 nm and 75/150/75 nm were studied at annealing temperatures of high vacuum annealing at 500- 900°C at 10 Pa. The a-Si thickness and annealing temperature significantly affected the particle size, density, and distribution of np-SiC. No nanoparticles were formed for multilayers annealed at 500°C, while a few particles started to appear as the annealing temperature was increased to 700°C at both structures. Many np-SiC appeared at 900°C at a density order about 108 cm -2 for both structure, but the thicker a-Si structure i.e. a-Si/C/a-Si (75/150/75 nm) has a particle density approximately 1.8 times higher than a-Si/C/a-Si (50/200/50 nm). This is attributed to the variation of activation energy, surface energy and atomic mobility during reaction of Si and C at different a-Si thickness and temperature. The higher the annealing temperature, the higher the particle density. The thicker a-Si structure with higher density implies that it has lower activation energy of SiC formation than the thin a-Si structure.

Original languageEnglish
Title of host publicationProceedings of the 2nd IEEE International Conference on Nano/Micro Engineered and Molecular Systems, IEEE NEMS 2007
Pages426-429
Number of pages4
DOIs
Publication statusPublished - 2007 Aug 28
Event2007 2nd IEEE International Conference on Nano/Micro Engineered and Molecular Systems, IEEE NEMS 2007 - Bangkok, Thailand
Duration: 2007 Jan 162007 Jan 19

Publication series

NameProceedings of the 2nd IEEE International Conference on Nano/Micro Engineered and Molecular Systems, IEEE NEMS 2007

Other

Other2007 2nd IEEE International Conference on Nano/Micro Engineered and Molecular Systems, IEEE NEMS 2007
CountryThailand
CityBangkok
Period07-01-1607-01-19

Fingerprint

Vacuum
Annealing
Nanoparticles
Temperature
Activation energy
Interfacial energy
Multilayers
Particle size
Substrates

All Science Journal Classification (ASJC) codes

  • Computer Networks and Communications
  • Computer Science Applications
  • Electrical and Electronic Engineering

Cite this

Chung, C-K., Wu, B. H., Chen, T. S., Peng, C. C., & Shih, T. R. (2007). Effect of amorphous Si thickness on the formation of SiC nanoparticles during high vacuum annealing. In Proceedings of the 2nd IEEE International Conference on Nano/Micro Engineered and Molecular Systems, IEEE NEMS 2007 (pp. 426-429). [4160354] (Proceedings of the 2nd IEEE International Conference on Nano/Micro Engineered and Molecular Systems, IEEE NEMS 2007). https://doi.org/10.1109/NEMS.2007.352051
Chung, Chen-Kuei ; Wu, B. H. ; Chen, T. S. ; Peng, C. C. ; Shih, T. R. / Effect of amorphous Si thickness on the formation of SiC nanoparticles during high vacuum annealing. Proceedings of the 2nd IEEE International Conference on Nano/Micro Engineered and Molecular Systems, IEEE NEMS 2007. 2007. pp. 426-429 (Proceedings of the 2nd IEEE International Conference on Nano/Micro Engineered and Molecular Systems, IEEE NEMS 2007).
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abstract = "In this paper, a novel approach for the formation of SiC nanoparticles (np-SiC) has been demonstrated by annealing the three-layer a-Si/C/a-Si film on a Si(100) substrate. The np-SiC formation strongly depends on the amorphous Si (a-Si) thickness and annealing temperature. Both three-layer a-Si/C/a-Si structures in different thickness i.e. 50/200/50 nm and 75/150/75 nm were studied at annealing temperatures of high vacuum annealing at 500- 900°C at 10 Pa. The a-Si thickness and annealing temperature significantly affected the particle size, density, and distribution of np-SiC. No nanoparticles were formed for multilayers annealed at 500°C, while a few particles started to appear as the annealing temperature was increased to 700°C at both structures. Many np-SiC appeared at 900°C at a density order about 108 cm -2 for both structure, but the thicker a-Si structure i.e. a-Si/C/a-Si (75/150/75 nm) has a particle density approximately 1.8 times higher than a-Si/C/a-Si (50/200/50 nm). This is attributed to the variation of activation energy, surface energy and atomic mobility during reaction of Si and C at different a-Si thickness and temperature. The higher the annealing temperature, the higher the particle density. The thicker a-Si structure with higher density implies that it has lower activation energy of SiC formation than the thin a-Si structure.",
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Chung, C-K, Wu, BH, Chen, TS, Peng, CC & Shih, TR 2007, Effect of amorphous Si thickness on the formation of SiC nanoparticles during high vacuum annealing. in Proceedings of the 2nd IEEE International Conference on Nano/Micro Engineered and Molecular Systems, IEEE NEMS 2007., 4160354, Proceedings of the 2nd IEEE International Conference on Nano/Micro Engineered and Molecular Systems, IEEE NEMS 2007, pp. 426-429, 2007 2nd IEEE International Conference on Nano/Micro Engineered and Molecular Systems, IEEE NEMS 2007, Bangkok, Thailand, 07-01-16. https://doi.org/10.1109/NEMS.2007.352051

Effect of amorphous Si thickness on the formation of SiC nanoparticles during high vacuum annealing. / Chung, Chen-Kuei; Wu, B. H.; Chen, T. S.; Peng, C. C.; Shih, T. R.

Proceedings of the 2nd IEEE International Conference on Nano/Micro Engineered and Molecular Systems, IEEE NEMS 2007. 2007. p. 426-429 4160354 (Proceedings of the 2nd IEEE International Conference on Nano/Micro Engineered and Molecular Systems, IEEE NEMS 2007).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

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Chung C-K, Wu BH, Chen TS, Peng CC, Shih TR. Effect of amorphous Si thickness on the formation of SiC nanoparticles during high vacuum annealing. In Proceedings of the 2nd IEEE International Conference on Nano/Micro Engineered and Molecular Systems, IEEE NEMS 2007. 2007. p. 426-429. 4160354. (Proceedings of the 2nd IEEE International Conference on Nano/Micro Engineered and Molecular Systems, IEEE NEMS 2007). https://doi.org/10.1109/NEMS.2007.352051