Abstract
In this paper, a novel approach for the formation of SiC nanoparticles (np-SiC) has been demonstrated by annealing the three-layer a-Si/C/a-Si film on a Si(100) substrate. The np-SiC formation strongly depends on the amorphous Si (a-Si) thickness and annealing temperature. Both three-layer a-Si/C/a-Si structures in different thickness i.e. 50/200/50 nm and 75/150/75 nm were studied at annealing temperatures of high vacuum annealing at 500- 900°C at 10 Pa. The a-Si thickness and annealing temperature significantly affected the particle size, density, and distribution of np-SiC. No nanoparticles were formed for multilayers annealed at 500°C, while a few particles started to appear as the annealing temperature was increased to 700°C at both structures. Many np-SiC appeared at 900°C at a density order about 108 cm -2 for both structure, but the thicker a-Si structure i.e. a-Si/C/a-Si (75/150/75 nm) has a particle density approximately 1.8 times higher than a-Si/C/a-Si (50/200/50 nm). This is attributed to the variation of activation energy, surface energy and atomic mobility during reaction of Si and C at different a-Si thickness and temperature. The higher the annealing temperature, the higher the particle density. The thicker a-Si structure with higher density implies that it has lower activation energy of SiC formation than the thin a-Si structure.
| Original language | English |
|---|---|
| Title of host publication | Proceedings of the 2nd IEEE International Conference on Nano/Micro Engineered and Molecular Systems, IEEE NEMS 2007 |
| Pages | 426-429 |
| Number of pages | 4 |
| DOIs | |
| Publication status | Published - 2007 Aug 28 |
| Event | 2007 2nd IEEE International Conference on Nano/Micro Engineered and Molecular Systems, IEEE NEMS 2007 - Bangkok, Thailand Duration: 2007 Jan 16 → 2007 Jan 19 |
Publication series
| Name | Proceedings of the 2nd IEEE International Conference on Nano/Micro Engineered and Molecular Systems, IEEE NEMS 2007 |
|---|
Other
| Other | 2007 2nd IEEE International Conference on Nano/Micro Engineered and Molecular Systems, IEEE NEMS 2007 |
|---|---|
| Country | Thailand |
| City | Bangkok |
| Period | 07-01-16 → 07-01-19 |
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All Science Journal Classification (ASJC) codes
- Computer Networks and Communications
- Computer Science Applications
- Electrical and Electronic Engineering
Cite this
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Effect of amorphous Si thickness on the formation of SiC nanoparticles during high vacuum annealing. / Chung, Chen-Kuei; Wu, B. H.; Chen, T. S.; Peng, C. C.; Shih, T. R.
Proceedings of the 2nd IEEE International Conference on Nano/Micro Engineered and Molecular Systems, IEEE NEMS 2007. 2007. p. 426-429 4160354 (Proceedings of the 2nd IEEE International Conference on Nano/Micro Engineered and Molecular Systems, IEEE NEMS 2007).Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
TY - GEN
T1 - Effect of amorphous Si thickness on the formation of SiC nanoparticles during high vacuum annealing
AU - Chung, Chen-Kuei
AU - Wu, B. H.
AU - Chen, T. S.
AU - Peng, C. C.
AU - Shih, T. R.
PY - 2007/8/28
Y1 - 2007/8/28
N2 - In this paper, a novel approach for the formation of SiC nanoparticles (np-SiC) has been demonstrated by annealing the three-layer a-Si/C/a-Si film on a Si(100) substrate. The np-SiC formation strongly depends on the amorphous Si (a-Si) thickness and annealing temperature. Both three-layer a-Si/C/a-Si structures in different thickness i.e. 50/200/50 nm and 75/150/75 nm were studied at annealing temperatures of high vacuum annealing at 500- 900°C at 10 Pa. The a-Si thickness and annealing temperature significantly affected the particle size, density, and distribution of np-SiC. No nanoparticles were formed for multilayers annealed at 500°C, while a few particles started to appear as the annealing temperature was increased to 700°C at both structures. Many np-SiC appeared at 900°C at a density order about 108 cm -2 for both structure, but the thicker a-Si structure i.e. a-Si/C/a-Si (75/150/75 nm) has a particle density approximately 1.8 times higher than a-Si/C/a-Si (50/200/50 nm). This is attributed to the variation of activation energy, surface energy and atomic mobility during reaction of Si and C at different a-Si thickness and temperature. The higher the annealing temperature, the higher the particle density. The thicker a-Si structure with higher density implies that it has lower activation energy of SiC formation than the thin a-Si structure.
AB - In this paper, a novel approach for the formation of SiC nanoparticles (np-SiC) has been demonstrated by annealing the three-layer a-Si/C/a-Si film on a Si(100) substrate. The np-SiC formation strongly depends on the amorphous Si (a-Si) thickness and annealing temperature. Both three-layer a-Si/C/a-Si structures in different thickness i.e. 50/200/50 nm and 75/150/75 nm were studied at annealing temperatures of high vacuum annealing at 500- 900°C at 10 Pa. The a-Si thickness and annealing temperature significantly affected the particle size, density, and distribution of np-SiC. No nanoparticles were formed for multilayers annealed at 500°C, while a few particles started to appear as the annealing temperature was increased to 700°C at both structures. Many np-SiC appeared at 900°C at a density order about 108 cm -2 for both structure, but the thicker a-Si structure i.e. a-Si/C/a-Si (75/150/75 nm) has a particle density approximately 1.8 times higher than a-Si/C/a-Si (50/200/50 nm). This is attributed to the variation of activation energy, surface energy and atomic mobility during reaction of Si and C at different a-Si thickness and temperature. The higher the annealing temperature, the higher the particle density. The thicker a-Si structure with higher density implies that it has lower activation energy of SiC formation than the thin a-Si structure.
UR - http://www.scopus.com/inward/record.url?scp=34548137730&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=34548137730&partnerID=8YFLogxK
U2 - 10.1109/NEMS.2007.352051
DO - 10.1109/NEMS.2007.352051
M3 - Conference contribution
SN - 1424406102
SN - 9781424406104
T3 - Proceedings of the 2nd IEEE International Conference on Nano/Micro Engineered and Molecular Systems, IEEE NEMS 2007
SP - 426
EP - 429
BT - Proceedings of the 2nd IEEE International Conference on Nano/Micro Engineered and Molecular Systems, IEEE NEMS 2007
ER -