Effect of annealing on low-threshold-current large-wavelength InGaAs quantum well vertical-cavity laser

I. Liang Chen, Wei Chou Hsu, Hao Chung Kuo, Chia Pin Sung, Chih Hung Chiou, Jin Mei Wang, Yu Hsiang Chang, Hsin Chieh Yu, Tsin Dong Lee

Research output: Contribution to journalArticlepeer-review

Abstract

An emission wavelength record emission wavelength of 1245 nm in double InGaAs/GaAs quantum wells without a straincompensated barrier is obtained by metalorganic chemical vapor deposition (MOCVD). The effect of annealing on highly strained InGaAs quantum wells is analyzed using phtoluminanescence spectra. By comparing devices p-type distributed Bragg reflector (p-DBR) growth temperatures, the preliminary results indicate that a device with a low p-DBR growth temperature of 670°C exhibits a low threshold current and a high light output power. A threshold current of 6.7 mA in an InGaAs vertical-cavity surface emitting laser (VCSEL) in CW operation is realized with an emission spectrum up to 1.26 μm.

Original languageEnglish
Pages (from-to)770-773
Number of pages4
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume45
Issue number2 A
DOIs
Publication statusPublished - 2006 Feb 8

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

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