Effect of annealing on low-threshold-current large-wavelength InGaAs quantum well vertical-cavity laser

I. Liang Chen, Wei Chou Hsu, Hao Chung Kuo, Chia Pin Sung, Chih Hung Chiou, Jin Mei Wang, Yu Hsiang Chang, Hsin Chieh Yu, Tsin Dong Lee

Research output: Contribution to journalArticle

Abstract

An emission wavelength record emission wavelength of 1245 nm in double InGaAs/GaAs quantum wells without a straincompensated barrier is obtained by metalorganic chemical vapor deposition (MOCVD). The effect of annealing on highly strained InGaAs quantum wells is analyzed using phtoluminanescence spectra. By comparing devices p-type distributed Bragg reflector (p-DBR) growth temperatures, the preliminary results indicate that a device with a low p-DBR growth temperature of 670°C exhibits a low threshold current and a high light output power. A threshold current of 6.7 mA in an InGaAs vertical-cavity surface emitting laser (VCSEL) in CW operation is realized with an emission spectrum up to 1.26 μm.

Original languageEnglish
Pages (from-to)770-773
Number of pages4
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume45
Issue number2 A
DOIs
Publication statusPublished - 2006 Feb 8

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Distributed Bragg reflectors
Laser resonators
Growth temperature
Bragg reflectors
laser cavities
threshold currents
Semiconductor quantum wells
quantum wells
Annealing
Wavelength
annealing
Surface emitting lasers
Metallorganic chemical vapor deposition
surface emitting lasers
wavelengths
metalorganic chemical vapor deposition
emission spectra
cavities
temperature
output

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

Cite this

Chen, I. Liang ; Hsu, Wei Chou ; Kuo, Hao Chung ; Sung, Chia Pin ; Chiou, Chih Hung ; Wang, Jin Mei ; Chang, Yu Hsiang ; Yu, Hsin Chieh ; Lee, Tsin Dong. / Effect of annealing on low-threshold-current large-wavelength InGaAs quantum well vertical-cavity laser. In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers. 2006 ; Vol. 45, No. 2 A. pp. 770-773.
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abstract = "An emission wavelength record emission wavelength of 1245 nm in double InGaAs/GaAs quantum wells without a straincompensated barrier is obtained by metalorganic chemical vapor deposition (MOCVD). The effect of annealing on highly strained InGaAs quantum wells is analyzed using phtoluminanescence spectra. By comparing devices p-type distributed Bragg reflector (p-DBR) growth temperatures, the preliminary results indicate that a device with a low p-DBR growth temperature of 670°C exhibits a low threshold current and a high light output power. A threshold current of 6.7 mA in an InGaAs vertical-cavity surface emitting laser (VCSEL) in CW operation is realized with an emission spectrum up to 1.26 μm.",
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Effect of annealing on low-threshold-current large-wavelength InGaAs quantum well vertical-cavity laser. / Chen, I. Liang; Hsu, Wei Chou; Kuo, Hao Chung; Sung, Chia Pin; Chiou, Chih Hung; Wang, Jin Mei; Chang, Yu Hsiang; Yu, Hsin Chieh; Lee, Tsin Dong.

In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Vol. 45, No. 2 A, 08.02.2006, p. 770-773.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Effect of annealing on low-threshold-current large-wavelength InGaAs quantum well vertical-cavity laser

AU - Chen, I. Liang

AU - Hsu, Wei Chou

AU - Kuo, Hao Chung

AU - Sung, Chia Pin

AU - Chiou, Chih Hung

AU - Wang, Jin Mei

AU - Chang, Yu Hsiang

AU - Yu, Hsin Chieh

AU - Lee, Tsin Dong

PY - 2006/2/8

Y1 - 2006/2/8

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AB - An emission wavelength record emission wavelength of 1245 nm in double InGaAs/GaAs quantum wells without a straincompensated barrier is obtained by metalorganic chemical vapor deposition (MOCVD). The effect of annealing on highly strained InGaAs quantum wells is analyzed using phtoluminanescence spectra. By comparing devices p-type distributed Bragg reflector (p-DBR) growth temperatures, the preliminary results indicate that a device with a low p-DBR growth temperature of 670°C exhibits a low threshold current and a high light output power. A threshold current of 6.7 mA in an InGaAs vertical-cavity surface emitting laser (VCSEL) in CW operation is realized with an emission spectrum up to 1.26 μm.

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