Effect of annealing process on trap properties in high-k/metal gate n-channel metal-oxide-semiconductor field-effect transistors through low-frequency noise and random telegraph noise characterization

Hsu Feng Chiu, San Lein Wu, Yee Shyi Chang, Shoou Jinn Chang, Po Chin Huang, Jone Fang Chen, Shih Chang Tsai, Chien Ming Lai, Chia Wei Hsu, Osbert Cheng

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