Effect of annealing temperature and oxygen flow in the properties of ion beam sputtered SnO2-X thin films

Chun-Min Wang, Chun Chieh Huang, Jui Chao Kuo, Dipti Ranjan Sahu, Jow Lay Huang

Research output: Contribution to journalArticlepeer-review

9 Citations (Scopus)

Abstract

Tin oxide (SnO2-x) thin films were prepared under various flow ratios of O2/(O2 + Ar) on unheated glass substrate using the ion beam sputtering (IBS) deposition technique. This work studied the effects of the flow ratio of O2/(O2 + Ar), chamber pressures and post-annealing treatment on the physical properties of SnO2 thin films. It was found that annealing affects the crystal quality of the films as seen from both X-ray diffraction (XRD) and transmission electron microscopy (TEM) analysis. In addition, the surface RMS roughness was measured with atomic force microscopy (AFM). Auger electron spectroscopy (AES) analysis was used to obtain the changes of elemental distribution between tin and oxygen atomic concentration. The electrical property is discussed with attention to the structure factor.

Original languageEnglish
Pages (from-to)5289-5297
Number of pages9
JournalMaterials
Volume8
Issue number8
DOIs
Publication statusPublished - 2015 Jan 1

All Science Journal Classification (ASJC) codes

  • General Materials Science

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