TY - JOUR
T1 - Effect of annealing temperature on the microstructure and photoluminescence of low resistivity Si/SiN/TaN thin films using magnetron sputtering
AU - Chung, C. K.
AU - Chen, T. S.
AU - Chang, N. W.
AU - Liao, M. W.
AU - Lee, C. T.
N1 - Funding Information:
This work is partially sponsored by National Science Council under grant No. 99-2622-E-006-028-CC3 and NSC 99-2221-E-006-032-MY3 . We pay our great thanks to the Center for Micro/Nano Science and Technology (CMNST) in National Cheng Kung University for the access of process and analysis equipment.
PY - 2011/12/30
Y1 - 2011/12/30
N2 - A lot of studies have been devoted to the porous Si, erbium-doped Si and Si-embedded in dielectric matrix of SiO or SiN together with long-time conventional furnace annealing. Besides, it is noted that these Si nanostructured films were highly resistive and non-conducting. In this paper, we have investigated the effect of annealing temperature on the microstructure and photoluminescence of low-resistivity Si/SiN/TaN nanocomposite thin films which are deposited by magnetron sputtering and followed by rapid thermal annealing (RTA). All samples are of luminescence and staying low resistivity at about 1462-2162 μΩ cm which increases with increasing annealing temperatures. The asymmetric broad photoluminescence (PL) peak covered the wavelengths of 400-700 nm. The wide visible PL spectra can be deconvoluted into three bands of blue (∼ 455 nm), green-yellow (∼ 525 nm), and orange emissions (∼ 665 nm), which correspond to the emission origins from unsatisfied states in imperfections of interface between the Si:O and SiN:O, located states related to the mixed SiO or SiN bonds in SiN:O layer and nc-Si embedded in SiN:O matrix. The detailed mechanism of broad visible PL was investigated in terms of microstructure and bonding configuration evolution. The relationship between the annealing temperature, microstructure and PL behavior of Si/SiN/TaN multilayer films is discussed and established.
AB - A lot of studies have been devoted to the porous Si, erbium-doped Si and Si-embedded in dielectric matrix of SiO or SiN together with long-time conventional furnace annealing. Besides, it is noted that these Si nanostructured films were highly resistive and non-conducting. In this paper, we have investigated the effect of annealing temperature on the microstructure and photoluminescence of low-resistivity Si/SiN/TaN nanocomposite thin films which are deposited by magnetron sputtering and followed by rapid thermal annealing (RTA). All samples are of luminescence and staying low resistivity at about 1462-2162 μΩ cm which increases with increasing annealing temperatures. The asymmetric broad photoluminescence (PL) peak covered the wavelengths of 400-700 nm. The wide visible PL spectra can be deconvoluted into three bands of blue (∼ 455 nm), green-yellow (∼ 525 nm), and orange emissions (∼ 665 nm), which correspond to the emission origins from unsatisfied states in imperfections of interface between the Si:O and SiN:O, located states related to the mixed SiO or SiN bonds in SiN:O layer and nc-Si embedded in SiN:O matrix. The detailed mechanism of broad visible PL was investigated in terms of microstructure and bonding configuration evolution. The relationship between the annealing temperature, microstructure and PL behavior of Si/SiN/TaN multilayer films is discussed and established.
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U2 - 10.1016/j.tsf.2011.07.061
DO - 10.1016/j.tsf.2011.07.061
M3 - Article
AN - SCOPUS:82755197813
SN - 0040-6090
VL - 520
SP - 1460
EP - 1463
JO - Thin Solid Films
JF - Thin Solid Films
IS - 5
ER -