An investigation is performed into the optical and electronic properties of Al and Ga co-doped ZnO thin films deposited on glass substrates using radio frequency magnetron sputtering (RF-sputtering) and then annealed at temperatures of 200, 300 and 400 °C. The XRD analysis results show that the films have a (002) preferential orientation. However, the intensity of the (002) peak increases with an increasing annealing temperature. Moreover, the optical transmittance increases and the electrical resistivity decreases as the annealing temperature increases.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
- Electrical and Electronic Engineering