Effect of annealing temperature on the optoelectronic characteristic of Al and Ga co-doping ZnO thin films

Tang Yi Tsai, Tao Hsing Chen, Sheng Lung Tu, Yen Hsun Su, Yun Hwei Shen, Chia Lin Yang

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

An investigation is performed into the optical and electronic properties of Al and Ga co-doped ZnO thin films deposited on glass substrates using radio frequency magnetron sputtering (RF-sputtering) and then annealed at temperatures of 200, 300 and 400 °C. The XRD analysis results show that the films have a (002) preferential orientation. However, the intensity of the (002) peak increases with an increasing annealing temperature. Moreover, the optical transmittance increases and the electrical resistivity decreases as the annealing temperature increases.

Original languageEnglish
Article number475
JournalOptical and Quantum Electronics
Volume48
Issue number10
DOIs
Publication statusPublished - 2016 Oct 1

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering

Fingerprint Dive into the research topics of 'Effect of annealing temperature on the optoelectronic characteristic of Al and Ga co-doping ZnO thin films'. Together they form a unique fingerprint.

Cite this