Effect of annealing temperature on the optoelectronic characteristic of Al and Ga co-doping ZnO thin films

Tang Yi Tsai; Tao Hsing Chen; Sheng Lung Tu; Yen Hsun Su; Yun Hwei Shen; Chia Lin Yang

doi:10.1007/s11082-016-0745-1

Effect of annealing temperature on the optoelectronic characteristic of Al and Ga co-doping ZnO thin films

Tang Yi Tsai, Tao Hsing Chen, Sheng Lung Tu, Yen Hsun Su, Yun Hwei Shen, Chia Lin Yang

Research output: Contribution to journal › Article › peer-review

8 Citations (Scopus)

Abstract

An investigation is performed into the optical and electronic properties of Al and Ga co-doped ZnO thin films deposited on glass substrates using radio frequency magnetron sputtering (RF-sputtering) and then annealed at temperatures of 200, 300 and 400 °C. The XRD analysis results show that the films have a (002) preferential orientation. However, the intensity of the (002) peak increases with an increasing annealing temperature. Moreover, the optical transmittance increases and the electrical resistivity decreases as the annealing temperature increases.

Original language	English
Article number	475
Journal	Optical and Quantum Electronics
Volume	48
Issue number	10
DOIs	https://doi.org/10.1007/s11082-016-0745-1
Publication status	Published - 2016 Oct 1

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Electrical and Electronic Engineering

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10.1007/s11082-016-0745-1

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abstract = "An investigation is performed into the optical and electronic properties of Al and Ga co-doped ZnO thin films deposited on glass substrates using radio frequency magnetron sputtering (RF-sputtering) and then annealed at temperatures of 200, 300 and 400 °C. The XRD analysis results show that the films have a (002) preferential orientation. However, the intensity of the (002) peak increases with an increasing annealing temperature. Moreover, the optical transmittance increases and the electrical resistivity decreases as the annealing temperature increases.",

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AU - Tsai, Tang Yi

AU - Chen, Tao Hsing

AU - Tu, Sheng Lung

AU - Su, Yen Hsun

AU - Shen, Yun Hwei

AU - Yang, Chia Lin

PY - 2016/10/1

Y1 - 2016/10/1

N2 - An investigation is performed into the optical and electronic properties of Al and Ga co-doped ZnO thin films deposited on glass substrates using radio frequency magnetron sputtering (RF-sputtering) and then annealed at temperatures of 200, 300 and 400 °C. The XRD analysis results show that the films have a (002) preferential orientation. However, the intensity of the (002) peak increases with an increasing annealing temperature. Moreover, the optical transmittance increases and the electrical resistivity decreases as the annealing temperature increases.

AB - An investigation is performed into the optical and electronic properties of Al and Ga co-doped ZnO thin films deposited on glass substrates using radio frequency magnetron sputtering (RF-sputtering) and then annealed at temperatures of 200, 300 and 400 °C. The XRD analysis results show that the films have a (002) preferential orientation. However, the intensity of the (002) peak increases with an increasing annealing temperature. Moreover, the optical transmittance increases and the electrical resistivity decreases as the annealing temperature increases.

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JO - Optical and Quantum Electronics

JF - Optical and Quantum Electronics

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Effect of annealing temperature on the optoelectronic characteristic of Al and Ga co-doping ZnO thin films

Abstract

All Science Journal Classification (ASJC) codes

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