Effect of annealing treatments on the microstructure of (Zr 0.8Sn0.2)TiO4 thin films sputtered on silicon

Cheng Hsing Hsu; Cheng Liang Huang

doi:10.1016/j.tsf.2005.07.202

Effect of annealing treatments on the microstructure of (Zr _0.8Sn_0.2)TiO₄ thin films sputtered on silicon

Cheng Hsing Hsu, Cheng Liang Huang

Department of Electrical Engineering

Research output: Contribution to journal › Conference article › peer-review

2 Citations (Scopus)

Abstract

This paper describes physical properties of Zirconium Tin Titanium Oxide doped 1 wt.% ZnO thin films on n-type Si substrate were deposited by rf magnetron sputtering at a fix rf power of 300 W, a deposition pressure of 5 mTorr, a substrate temperature of 450 °C and a argon-oxygen (Ar/O ₂) of 100/0. Particular attention will be paid to the effects of an annealing treatment in air ambient on the physical properties. The films were annealed at various temperatures from 500 °C to 700 °C and also changed annealing times from 2 h to 6 h. The powder target composition of (Zr _0.8Sn_0.2)TiO₄ was synthesized in the experiment. The annealed films were characterized using X-ray diffraction (XRD). The surface morphologies of annealed film were examined by atomic force microscopy and scanning electron microscopy.

Original language	English
Pages (from-to)	271-276
Number of pages	6
Journal	Thin Solid Films
Volume	498
Issue number	1-2
DOIs	https://doi.org/10.1016/j.tsf.2005.07.202
Publication status	Published - 2006 Mar 1
Event	Proceedings of the Third Asian Conference on Chemical Vapor Deposition (Third Asian-CVD), Third Asian CVD - Duration: 2004 Nov 12 → 2004 Nov 14

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Surfaces and Interfaces
Surfaces, Coatings and Films
Metals and Alloys
Materials Chemistry

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10.1016/j.tsf.2005.07.202

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title = "Effect of annealing treatments on the microstructure of (Zr 0.8Sn0.2)TiO4 thin films sputtered on silicon",

abstract = "This paper describes physical properties of Zirconium Tin Titanium Oxide doped 1 wt.% ZnO thin films on n-type Si substrate were deposited by rf magnetron sputtering at a fix rf power of 300 W, a deposition pressure of 5 mTorr, a substrate temperature of 450 °C and a argon-oxygen (Ar/O 2) of 100/0. Particular attention will be paid to the effects of an annealing treatment in air ambient on the physical properties. The films were annealed at various temperatures from 500 °C to 700 °C and also changed annealing times from 2 h to 6 h. The powder target composition of (Zr 0.8Sn0.2)TiO4 was synthesized in the experiment. The annealed films were characterized using X-ray diffraction (XRD). The surface morphologies of annealed film were examined by atomic force microscopy and scanning electron microscopy.",

author = "Hsu, {Cheng Hsing} and Huang, {Cheng Liang}",

note = "Funding Information: This work was supported by the National Science Council of the Republic of China under grant NSC94-2218-E-239-001.; Proceedings of the Third Asian Conference on Chemical Vapor Deposition (Third Asian-CVD), Third Asian CVD ; Conference date: 12-11-2004 Through 14-11-2004",

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doi = "10.1016/j.tsf.2005.07.202",

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T1 - Effect of annealing treatments on the microstructure of (Zr 0.8Sn0.2)TiO4 thin films sputtered on silicon

AU - Hsu, Cheng Hsing

AU - Huang, Cheng Liang

N1 - Funding Information: This work was supported by the National Science Council of the Republic of China under grant NSC94-2218-E-239-001.

PY - 2006/3/1

Y1 - 2006/3/1

N2 - This paper describes physical properties of Zirconium Tin Titanium Oxide doped 1 wt.% ZnO thin films on n-type Si substrate were deposited by rf magnetron sputtering at a fix rf power of 300 W, a deposition pressure of 5 mTorr, a substrate temperature of 450 °C and a argon-oxygen (Ar/O 2) of 100/0. Particular attention will be paid to the effects of an annealing treatment in air ambient on the physical properties. The films were annealed at various temperatures from 500 °C to 700 °C and also changed annealing times from 2 h to 6 h. The powder target composition of (Zr 0.8Sn0.2)TiO4 was synthesized in the experiment. The annealed films were characterized using X-ray diffraction (XRD). The surface morphologies of annealed film were examined by atomic force microscopy and scanning electron microscopy.

AB - This paper describes physical properties of Zirconium Tin Titanium Oxide doped 1 wt.% ZnO thin films on n-type Si substrate were deposited by rf magnetron sputtering at a fix rf power of 300 W, a deposition pressure of 5 mTorr, a substrate temperature of 450 °C and a argon-oxygen (Ar/O 2) of 100/0. Particular attention will be paid to the effects of an annealing treatment in air ambient on the physical properties. The films were annealed at various temperatures from 500 °C to 700 °C and also changed annealing times from 2 h to 6 h. The powder target composition of (Zr 0.8Sn0.2)TiO4 was synthesized in the experiment. The annealed films were characterized using X-ray diffraction (XRD). The surface morphologies of annealed film were examined by atomic force microscopy and scanning electron microscopy.

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DO - 10.1016/j.tsf.2005.07.202

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SN - 0040-6090

VL - 498

SP - 271

EP - 276

JO - Thin Solid Films

JF - Thin Solid Films

IS - 1-2

T2 - Proceedings of the Third Asian Conference on Chemical Vapor Deposition (Third Asian-CVD), Third Asian CVD

Y2 - 12 November 2004 through 14 November 2004

ER -

Effect of annealing treatments on the microstructure of (Zr _0.8Sn_0.2)TiO₄ thin films sputtered on silicon

Abstract

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