Effect of annealing ZnO on the performance of inverted polymer light-emitting diodes based on SAM/ZnO as an electron injection layer

Chen Yan Li, Ying Nien Chou, Jia Rong Syu, Sung Nien Hsieh, Tzung Da Tsai, Chen Hao Wu, Tzung-Fang Guo, Wei-Chou Hsu, Yao Jane Hsu, Ten-Chin Wen

Research output: Contribution to journalArticle

13 Citations (Scopus)

Abstract

An efficient electron injection/hole blocking layer, N-[3-(trimethoxysily) propyl]ethylenediamine that was grafted onto zinc oxide (ZnO/PEDA-TMS), was used in inverted polymer light-emitting diodes (PLEDs). PEDA-TMS induced a strong dipole directed towards ZnO, which was enhanced by vacuum energy level shifts of ultra-violet photoelectron spectroscopic observations, reducing the barrier height between ZnO and the emissive layer. The effect of annealing ZnO on the performance of PLEDs was analyzed using an electron-only device and capacitance-voltage (C-V) characterization. Following annealing at 300 °C, ZnO provided effective electron injection and blocked holes, which enhanced the recombination of the electrons and holes. The eletroluminescence efficiency of an inverted PLED with a ZnO/PEDA-TMS layer is comparable to that of a conventional device. The electron injection mechanism of the inverted device can be explained by C-V behaviors, which are correlated with the threshold voltage and turn-on voltage.

Original languageEnglish
Pages (from-to)1477-1482
Number of pages6
JournalOrganic Electronics
Volume12
Issue number9
DOIs
Publication statusPublished - 2011 Jan 1

Fingerprint

Electron injection
Light emitting diodes
Polymers
ethylenediamine
light emitting diodes
Annealing
injection
annealing
polymers
Electric potential
Capacitance
Zinc Oxide
electrons
Electrons
Photoelectrons
Zinc oxide
Threshold voltage
electric potential
Electron energy levels
capacitance

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Biomaterials
  • Chemistry(all)
  • Condensed Matter Physics
  • Materials Chemistry
  • Electrical and Electronic Engineering

Cite this

Li, Chen Yan ; Chou, Ying Nien ; Syu, Jia Rong ; Hsieh, Sung Nien ; Tsai, Tzung Da ; Wu, Chen Hao ; Guo, Tzung-Fang ; Hsu, Wei-Chou ; Hsu, Yao Jane ; Wen, Ten-Chin. / Effect of annealing ZnO on the performance of inverted polymer light-emitting diodes based on SAM/ZnO as an electron injection layer. In: Organic Electronics. 2011 ; Vol. 12, No. 9. pp. 1477-1482.
@article{c78cbb7881d544b88aca94d5b63aeef7,
title = "Effect of annealing ZnO on the performance of inverted polymer light-emitting diodes based on SAM/ZnO as an electron injection layer",
abstract = "An efficient electron injection/hole blocking layer, N-[3-(trimethoxysily) propyl]ethylenediamine that was grafted onto zinc oxide (ZnO/PEDA-TMS), was used in inverted polymer light-emitting diodes (PLEDs). PEDA-TMS induced a strong dipole directed towards ZnO, which was enhanced by vacuum energy level shifts of ultra-violet photoelectron spectroscopic observations, reducing the barrier height between ZnO and the emissive layer. The effect of annealing ZnO on the performance of PLEDs was analyzed using an electron-only device and capacitance-voltage (C-V) characterization. Following annealing at 300 °C, ZnO provided effective electron injection and blocked holes, which enhanced the recombination of the electrons and holes. The eletroluminescence efficiency of an inverted PLED with a ZnO/PEDA-TMS layer is comparable to that of a conventional device. The electron injection mechanism of the inverted device can be explained by C-V behaviors, which are correlated with the threshold voltage and turn-on voltage.",
author = "Li, {Chen Yan} and Chou, {Ying Nien} and Syu, {Jia Rong} and Hsieh, {Sung Nien} and Tsai, {Tzung Da} and Wu, {Chen Hao} and Tzung-Fang Guo and Wei-Chou Hsu and Hsu, {Yao Jane} and Ten-Chin Wen",
year = "2011",
month = "1",
day = "1",
doi = "10.1016/j.orgel.2011.05.022",
language = "English",
volume = "12",
pages = "1477--1482",
journal = "Organic Electronics: physics, materials, applications",
issn = "1566-1199",
publisher = "Elsevier",
number = "9",

}

Effect of annealing ZnO on the performance of inverted polymer light-emitting diodes based on SAM/ZnO as an electron injection layer. / Li, Chen Yan; Chou, Ying Nien; Syu, Jia Rong; Hsieh, Sung Nien; Tsai, Tzung Da; Wu, Chen Hao; Guo, Tzung-Fang; Hsu, Wei-Chou; Hsu, Yao Jane; Wen, Ten-Chin.

In: Organic Electronics, Vol. 12, No. 9, 01.01.2011, p. 1477-1482.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Effect of annealing ZnO on the performance of inverted polymer light-emitting diodes based on SAM/ZnO as an electron injection layer

AU - Li, Chen Yan

AU - Chou, Ying Nien

AU - Syu, Jia Rong

AU - Hsieh, Sung Nien

AU - Tsai, Tzung Da

AU - Wu, Chen Hao

AU - Guo, Tzung-Fang

AU - Hsu, Wei-Chou

AU - Hsu, Yao Jane

AU - Wen, Ten-Chin

PY - 2011/1/1

Y1 - 2011/1/1

N2 - An efficient electron injection/hole blocking layer, N-[3-(trimethoxysily) propyl]ethylenediamine that was grafted onto zinc oxide (ZnO/PEDA-TMS), was used in inverted polymer light-emitting diodes (PLEDs). PEDA-TMS induced a strong dipole directed towards ZnO, which was enhanced by vacuum energy level shifts of ultra-violet photoelectron spectroscopic observations, reducing the barrier height between ZnO and the emissive layer. The effect of annealing ZnO on the performance of PLEDs was analyzed using an electron-only device and capacitance-voltage (C-V) characterization. Following annealing at 300 °C, ZnO provided effective electron injection and blocked holes, which enhanced the recombination of the electrons and holes. The eletroluminescence efficiency of an inverted PLED with a ZnO/PEDA-TMS layer is comparable to that of a conventional device. The electron injection mechanism of the inverted device can be explained by C-V behaviors, which are correlated with the threshold voltage and turn-on voltage.

AB - An efficient electron injection/hole blocking layer, N-[3-(trimethoxysily) propyl]ethylenediamine that was grafted onto zinc oxide (ZnO/PEDA-TMS), was used in inverted polymer light-emitting diodes (PLEDs). PEDA-TMS induced a strong dipole directed towards ZnO, which was enhanced by vacuum energy level shifts of ultra-violet photoelectron spectroscopic observations, reducing the barrier height between ZnO and the emissive layer. The effect of annealing ZnO on the performance of PLEDs was analyzed using an electron-only device and capacitance-voltage (C-V) characterization. Following annealing at 300 °C, ZnO provided effective electron injection and blocked holes, which enhanced the recombination of the electrons and holes. The eletroluminescence efficiency of an inverted PLED with a ZnO/PEDA-TMS layer is comparable to that of a conventional device. The electron injection mechanism of the inverted device can be explained by C-V behaviors, which are correlated with the threshold voltage and turn-on voltage.

UR - http://www.scopus.com/inward/record.url?scp=79959421961&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=79959421961&partnerID=8YFLogxK

U2 - 10.1016/j.orgel.2011.05.022

DO - 10.1016/j.orgel.2011.05.022

M3 - Article

AN - SCOPUS:79959421961

VL - 12

SP - 1477

EP - 1482

JO - Organic Electronics: physics, materials, applications

JF - Organic Electronics: physics, materials, applications

SN - 1566-1199

IS - 9

ER -