Effect of applied potential on the chemical mechanical polishing of aluminum in phosphoric acid base slurry

Hong Shi Kuo, Wen Ta Tsai

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19 Citations (Scopus)

Abstract

The electrochemical behavior of Al in phosphoric acid base slurry was investigated under chemical mechanical polishing (CMP) condition. The effect of applied potential on the CMP metal removal rate was also evaluated. The results from potentiodynamic polarization curve measurements indicated that a contact pressure in the range of 3 to 9 psi greatly modified the passivation behavior of Al in 5 vol% H3PO4 + 0.5 M citric acid + 5 wt% Al2O3 slurry by a decrease in corrosion potential and an increase in passive current density. The experimental results also showed that CMP removal rate strongly depended on the contact pressure and potential applied. The potential dependence behavior of the removal rate could be divided into three regions depending on the direction of polarization and the magnitude of potential applied. The results of electrochemical impedance spectroscopy and Auger electron spectroscopy examinations showed that passive film formation on Al in the testing slurry was affected by the applied potential, which in term caused a change in the relative contribution of the corrosion and mechanical abrasion to the total removal rate of Al.

Original languageEnglish
Pages (from-to)2136-2142
Number of pages7
JournalJournal of the Electrochemical Society
Volume147
Issue number6
DOIs
Publication statusPublished - 2000 Jun

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Renewable Energy, Sustainability and the Environment
  • Surfaces, Coatings and Films
  • Electrochemistry
  • Materials Chemistry

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