Effect of arsenic implantation dose on p-type ZnO films obtained via thermal diffusion from silicon substrates

Yi Jen Huang, Meng Fu Shih, Chun Chu Liu, Sheng-Yuan Chu, Kuang-Yao Lo

Research output: Contribution to journalArticlepeer-review

2 Citations (Scopus)

Abstract

Arsenic (As)-doped ZnO films were obtained via thermal diffusion from low energy high dose implanted silicon substrates using thermal treatment. The implantation conditions, such as implantation dose and energy, were adjusted to allow more nonactivated dopants in the surface region of the substrate and to outdiffuse into ZnO films efficiently. With the proper implantation dose and energy, the ZnO films exhibited p-type conduction, which increased the hole concentration and preservation time in the air ambient. The maximum carrier concentration of the As-doped ZnO films was 8.06× 1018 cm -3, and the resistivity reached 1.63× 10-1 cm.

Original languageEnglish
JournalElectrochemical and Solid-State Letters
Volume13
Issue number11
DOIs
Publication statusPublished - 2010 Sep 20

All Science Journal Classification (ASJC) codes

  • Chemical Engineering(all)
  • Materials Science(all)
  • Physical and Theoretical Chemistry
  • Electrochemistry
  • Electrical and Electronic Engineering

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